1998
DOI: 10.1116/1.581517
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Deposition of SiO2 films from novel alkoxysilane/O2 plasmas

Abstract: The deposition of SiO2 films from novel alkoxysilane/O2 rf plasmas has been investigated using tetraethoxysilane and the novel alkoxysilanes, triethoxysilane, tetramethoxysilane, and trimethoxysilane. We have demonstrated that high quality SiO2 films can be deposited from each of these alkoxysilanes under similar conditions. For all precursors, film deposition rates decrease with the addition of O2. Using 20:80 alkoxysilane/O2 plasmas, film deposition rate decreases with increasing substrate temperature and pl… Show more

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Cited by 35 publications
(18 citation statements)
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“…3(b, d)] show peaks resulting from Si-CH 3 bonds (1264 cm Ϫ1 ) and Si-O, Si-C, or Si-O-C bonds (774 cm Ϫ1 ). 21 Note that the broad peak at 3337 cm Ϫ1 due to the O-H stretch of the wood components is somewhat reduced in intensity in the spectra of coated specimens. In addition, the weak peaks at 2921 and 2851 cm Ϫ1 caused by the C-H stretch of the wood components have been replaced by sharper and much stronger peaks resulting from the C-H stretch of the long hydrocarbon chain of HDTMOS bound to the wood by the sol-gel process.…”
Section: Resultsmentioning
confidence: 97%
“…3(b, d)] show peaks resulting from Si-CH 3 bonds (1264 cm Ϫ1 ) and Si-O, Si-C, or Si-O-C bonds (774 cm Ϫ1 ). 21 Note that the broad peak at 3337 cm Ϫ1 due to the O-H stretch of the wood components is somewhat reduced in intensity in the spectra of coated specimens. In addition, the weak peaks at 2921 and 2851 cm Ϫ1 caused by the C-H stretch of the wood components have been replaced by sharper and much stronger peaks resulting from the C-H stretch of the long hydrocarbon chain of HDTMOS bound to the wood by the sol-gel process.…”
Section: Resultsmentioning
confidence: 97%
“…Also in the case of HMTW-coated specimens, the band at 1724 cm -1 was absent, indicating hemicellulose degradation induced by treatment with TiO2. The HMW-coated specimens on the other hand showed an additional band at 775 cm -1 (marked with an arrow), which was tentatively assigned to Si-O, Si-C or Si-O-C bonds (Bogart et al 1998), indicating the presence of the alkoxysilane deposit.…”
Section: Water Repellent Propertiesmentioning
confidence: 97%
“…To the right, we see a sharp medium-height peak of 1654 cm −1 in regards to the scissoring vibration of the N-H bond. The group of peaks at 1451-1388 cm −1 , medium and sharp in shape, corresponds to the asymmetric and symmetric stretches of C-H bonds in -CH 2groups [50,51], along with stretching vibration of C-F in the -CF 2 -CF 3 groups [52][53][54]. The small peak at 1270 cm −1 is a result of the Si-C vibrations in the Si-CH 3 group and the shoulder at 1194 cm −1 indicates the presence of C-F bonds corresponding to the stretches of >CF 2 bonds [54][55][56][57][58].…”
Section: Characterisation Of the Teos-fas Sol And Coatingmentioning
confidence: 99%