Deposition of silicon nitride films using chemical vapor deposition for photovoltaic applications

Jhansirani, K.; Dubey, R.S.; More, Mahendra A.; Singh, Shyam

doi:10.1016/j.rinp.2016.11.029

Cited by 34 publications

(14 citation statements)

References 23 publications

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“…Si 3 N 4 is also used as thin film material in the role of insulator/dielectric layer, optical coating, diffusion barrier. Besides, Si 3 N 4 thin film can be formed on semiconductors (Si, Ge, and GaAs) using various techniques including atomic layer deposition (ALD), physical vapor deposition (PVD), magnetron sputtering, and chemical vapor deposition (CVD) [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor

Türkay

Tataroğlu

2021

J Mater Sci: Mater Electron

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RF magnetron sputtering was used to grow silicon nitride (Si3N4) thin film on GaAs substrate to form metal–oxide–semiconductor (MOS) capacitor. Complex dielectric permittivity (ε*), complex electric modulus (M*) and complex electrical conductivity (σ*) of the prepared Au/Si3N4/p-GaAs (MOS) capacitor were studied in detail. These parameters were calculated using admittance measurements performed in the range of 150 K-350 K and 50 kHz-1 MHz. It is found that the dielectric constant (ε′) and dielectric loss (ε″) value decrease with increasing frequency. However, as the temperature increases, the ε′ and ε″ increased. Ac conductivity (σac) was increased with increasing both temperature and frequency. The activation energy (Ea) was determined by Arrhenius equation. Besides, the frequency dependence of σac was analyzed by Jonscher’s universal power law (σac = Aωs). Thus, the value of the frequency exponent (s) were determined.

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Section: Introductionmentioning

confidence: 99%

Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor

Türkay

Tataroğlu

2021

J Mater Sci: Mater Electron

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“…First, a Si 3 N 4 layer is deposited with a thickness of 75 nm using atomic chemical vapor deposition. A P-type silicon substrate is exposed to ammonia and hexamethyldisiloxane (HMDSO) gases with flow rates of 80 and 40 SSCM, respectively 20 . A deposition time of 15 min and temperature of 825 °C are needed to obtain a silicon nitride film of 75 nm thickness 20 .…”

Section: Design Consideration and Numerical Resultsmentioning

confidence: 99%

“…A P-type silicon substrate is exposed to ammonia and hexamethyldisiloxane (HMDSO) gases with flow rates of 80 and 40 SSCM, respectively 20 . A deposition time of 15 min and temperature of 825 °C are needed to obtain a silicon nitride film of 75 nm thickness 20 . Then, a thin layer of silicon is deposited with a thickness of 100 nm at 1000 °C using dichlorosilane (DCS) or Silane (SiH 4 ) and diborane (B 2 H 6 ) to obtain a heavily doped p-type silicon layer with doping concentration 5 × 10 17 cm −3 21 , 22 .…”

Section: Design Consideration and Numerical Resultsmentioning

confidence: 99%

Light absorption enhancement in ultrathin film solar cell with embedded dielectric nanowires

Elrabiaey

Hussein

Hameed

et al. 2020

Sci Rep

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A novel design of thin-film crystalline silicon solar cell (TF C-Si-SC) is proposed and numerically analyzed. The reported SC has 1.0 µm thickness of C-Si with embedded dielectric silicon dioxide nanowires (NWs). The introduced NWs increase the light scattering in the active layer which improves the optical path length and hence the light absorption. The SC geometry has been optimized using particle swarm optimization (PSO) technique to improve the optical and electrical characteristics. The suggested TF C-Si-SC with two embedded NWs offers photocurrent density ($${J}_{ph}$$ J ph ) of 32.8 mA cm−2 which is higher than 18 mA cm−2 of the conventional thin film SC with an enhancement of 82.2%. Further, a power conversion efficiency of 15.9% is achieved using the reported SC.

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“…Besides the precursor gas atmosphere, the deposition temperature was proved to be an influencing factor of several layer properties. K. Jhansirani et al [45] studied the optical behavior and chemical bonds of silicon nitride layers deposited at temperatures 750, 800, Lee et al [42] performed a comparative study on the passivation and optical characteristics of SiNx:H layers fabricated by PE-CVD from three different precursor mixtures: SiH 4 + NH 3 + N 2 and SiH 4 + NH 3 , SiH 4 + N 2 . In terms of optical (antireflection) properties, they found minor changes between the reflectance spectra at the short wavelength range (300-550 nm).…”

Section: Precursor Gas Atmosphere and Deposition Temperaturementioning

confidence: 99%

“…Besides the precursor gas atmosphere, the deposition temperature was proved to be an influencing factor of several layer properties. K. Jhansirani et al [45] studied the optical behavior and chemical bonds of silicon nitride layers deposited at temperatures 750, 800, and 850 • C. They found a rising trend of the refractive index while the deposition temperature was increased, which could be explained by the densified growth of the layer at increased temperatures. Furthermore they studied the evolution of the Fourier transformed infrared spectroscopy (FTIR) peak corresponding to the Si-N-Si stretching mode.…”

Section: Precursor Gas Atmosphere and Deposition Temperaturementioning

confidence: 99%

Silicon Nitride and Hydrogenated Silicon Nitride Thin Films: A Review of Fabrication Methods and Applications

Hegedűs

Balázsi

2021

Materials

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Silicon nitride (SiNx) and hydrogenated silicon nitride (SiNx:H) thin films enjoy widespread scientific interest across multiple application fields. Exceptional combination of optical, mechanical, and thermal properties allows for their utilization in several industries, from solar and semiconductor to coated glass production. The wide bandgap (~5.2 eV) of thin films allows for its optoelectronic application, while the SiNx layers could act as passivation antireflective layers or as a host matrix for silicon nano-inclusions (Si-ni) for solar cell devices. In addition, high water-impermeability of SiNx makes it a potential candidate for barrier layers of organic light emission diodes (OLEDs). This work presents a review of the state-of-the-art process techniques and applications of SiNx and SiNx:H thin films. We focus on the trends and latest achievements of various deposition processes of recent years. Historically, different kinds of chemical vapor deposition (CVD), such as plasma enhanced (PE-CVD) or hot wire (HW-CVD), as well as electron cyclotron resonance (ECR), are the most common deposition methods, while physical vapor deposition (PVD), which is primarily sputtering, is also widely used. Besides these fabrication methods, atomic layer deposition (ALD) is an emerging technology due to the fact that it is able to control the deposition at the atomic level and provide extremely thin SiNx layers. The application of these three deposition methods is compared, while special attention is paid to the effect of the fabrication method on the properties of SiNx thin films, particularly the optical, mechanical, and thermal properties.

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Deposition of silicon nitride films using chemical vapor deposition for photovoltaic applications

Cited by 34 publications

References 23 publications

Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor

Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor

Light absorption enhancement in ultrathin film solar cell with embedded dielectric nanowires

Silicon Nitride and Hydrogenated Silicon Nitride Thin Films: A Review of Fabrication Methods and Applications

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