2009
DOI: 10.1295/koron.66.97
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Deposition of Silicon Dioxide Thin Film by Means of “Cold Atmospheric Pressure Plasma Torch (CAPPLAT)”

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Cited by 3 publications
(2 citation statements)
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“…[13][14][15][16] Silicon oxide-based films were synthesized by APGD in helium or APTD in nitrogen with an admixture of organosilicon compounds, such as hexamethyldisiloxane (HMDSO) or tetraethoxysilane (TEOS). Ikeda et al 22 succeeded in achieving low-temperature deposition of SiO 2 films using the atmospheric pressure plasma jet from tetramethoxysilane (TMOS), which has a low content of carbon atoms per molecule compared to HMDSO or TEOS. In our previous research, SiOC(ÀH) films deposited from trimethylsilane exhibited a) Present address: TOTO LTD., Japan; electronic mail: okura0306@ gmail.com about 1 GPa, which is much softer than the films deposited by conventional low-pressure PECVD.…”
Section: Introductionmentioning
confidence: 99%
“…[13][14][15][16] Silicon oxide-based films were synthesized by APGD in helium or APTD in nitrogen with an admixture of organosilicon compounds, such as hexamethyldisiloxane (HMDSO) or tetraethoxysilane (TEOS). Ikeda et al 22 succeeded in achieving low-temperature deposition of SiO 2 films using the atmospheric pressure plasma jet from tetramethoxysilane (TMOS), which has a low content of carbon atoms per molecule compared to HMDSO or TEOS. In our previous research, SiOC(ÀH) films deposited from trimethylsilane exhibited a) Present address: TOTO LTD., Japan; electronic mail: okura0306@ gmail.com about 1 GPa, which is much softer than the films deposited by conventional low-pressure PECVD.…”
Section: Introductionmentioning
confidence: 99%
“…We developed an original Cold Atmospheric Pressure Plasma Torch (CAPPLAT), and have been studied its application to film deposition technology [10,11]. As a part of such efforts, we studied a-C:H coating on rubber surface using the CAPPLAT.…”
Section: Introductionmentioning
confidence: 99%