Deposition of silica films by the oxidation of silane in oxygen II: The calculation of growth rates in the tube reactor

Theoretical Modeling of SiO2 Photochemical Vapor Deposition and Comparison to Experimental Results for Three Oxidant Chemistries: SiH4 + O2, H2O/O2, and H2O2

“…1,2,34,35 The reaction of SiH 3 with O 2 molecules plays a key role by making available partially oxidized silicon species in conjunction with chaincarrying radicals, and SiO x H y 's are very reactive precursors to SiO 2 ; OH, O, and H propagate the chain and generate new SiH 3 radicals. 2,24,25, [34][35][36][37] Clearly, as our work shows, once radical species are generated, it is reasonable to hypothesize that reactions proceeding in the gas phase will dominate SiH 4 oxidation.…”

Hydrogen Elimination Kinetics during Chemical Vapor Deposition of Silica Films

“…(a) Production of Precursor Species and Radicals. On the basis of previous studies, − the film is considered to grow predominantly through film precursor species (SiO m H n ) formed in the gas phase, whereas direct adsorption and subsequent surface reactions of SiH 4 contributing to film deposition are supposed to be negligible. Film precursor species (SiO m H n ) and H, O, OH, and HO 2 radicals (R) are produced simultaneously in the gas phase by the chain reactions described above, which can be synthesized as follows: where By represents reaction byproducts (i.e., H 2 , H 2 O, and H 2 O 2 ).…”

“…Previous kinetic studies − indicate that silica growth from the SiH 4 /O 2 reaction proceeds predominantly through SiO m H n intermediate species formed in the gas phase, with negligible contribution of surface reactions between SiH 4 and O 2 molecules. The low gas-phase concentration of the SiO m H n species and their short lifetime make direct experimental observations a very difficult task, which explains the scarce number of studies dealing with this problem.…”

“…These schemes are consistent with the observed stoichiometry of SiH 4 /O 2 explosions, 5 ignition limits of silane oxidation, 6 and chromatography measurements and photoemission spectra of silane/oxygen flames. 7 Previous kinetic studies [8][9][10][11][12][13][14][15] indicate that silica growth from the SiH 4 /O 2 reaction proceeds predominantly through SiO m H n intermediate species formed in the gas phase, with negligible contribution of surface reactions between SiH 4 and O 2 molecules. The low gas-phase concentration of the SiO m H n species and their short lifetime make direct experimental observations a very difficult task, which explains the scarce number of studies dealing with this problem.…”

Particle formation during low-pressure chemical vapor deposition from silane and oxygen: Measurement, modeling, and film properties

“…These include those that employ phenomenological models that rely on empirical global gasphase reactions that are coupled to simple Langmuir-Hinshelwood surface kinetics, [5][6][7][8][9][10][11][12][13][14] and those that incorporate a more molecular description of the vapor phase chemistry through the use of elementary reactions. [15][16][17][18][19][20][21][22][23][24][25][26][27] Our work is based on the latter approach.…”