Deposition of molybdenum nitride thin films by r.f. reactive magnetron sputtering

Anitha, V. P.; Major, S.S.; Chandrashekharam, D.; Bhatnagar, M.C.

doi:10.1016/0257-8972(95)02425-5

Cited by 86 publications

(54 citation statements)

References 20 publications

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“…These composite coatings are expected to have tribological properties. The results are consistent with [29] since the Mo2N phase is strongly oriented in the (200) crystallographic direction at a nitrogen partial pressure of 4 × 10…”

Section: Reactive Sputtering Methodssupporting

confidence: 79%

“…The films consist of randomly oriented Mo2N crystallites at low nitrogen partial pressure about 10%-30% N2 in (Ar-N2) gas mixture (6.6 to 19.8 × 10 Pa, respectively). In contrast with [29] the films become amorphous at 50% N2. It is worth noting that the nitrogen partial pressure is one order of magnitude larger than in [29].…”

Section: Reactive Sputtering Methodsmentioning

confidence: 93%

“…It is worth noting that the nitrogen partial pressure is one order of magnitude larger than in [29]. However, in both works the orientation of crystallites as well as the transition to an amorphous structure seems to be due to an excess of nitrogen in the structure, the N/Mo mole ratio is equal to 0.67 and 0.72 in references [29] and [31], respectively. No columnar structure was observed in all as-deposited films under different nitrogen pressure values [31].…”

Section: Reactive Sputtering Methodsmentioning

confidence: 99%

“…Moreover, non-conductive targets can be used and the arching is reduced because of the use of alternating electric field. Anitha et al [29] synthesized molybdenum nitride thin films on chemically cleaned glass or silicon substrates by reactive rf magnetron sputtering. The molybdenum target is sputtered in (Ar-N2) gas mixtures at nitrogen partial pressures ranging between 1 and 60 × 10…”

Section: Reactive Sputtering Methodsmentioning

confidence: 99%

“…Hones et al [30] used the same process as [29] to investigate the structural and mechanical properties of molybdenum nitride films about 1 μm thick in a wide range of nitrogen/metal ratios. The discharge power is kept constant at 120 W, the total pressure of (Ar-N2) gas mixture during the sputtering process is equal to 0.66 Pa and the substrate temperature is fixed at 500 ± 20 K in order to obtain films of structures in the zone T regime of Thornton's structure zone classification which allows optimizing the mechanical properties of films (Section 5).…”

Section: Influence Of the Nitrogen Pressure On The Formation Of Mon Pmentioning

confidence: 99%

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Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

et al. 2015

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Among transition metal nitrides, molybdenum nitrides have been much less studied even though their mechanical properties as well as their electrical and catalytic properties make them very attractive for many applications. The δ-MoN phase of hexagonal structure is a potential candidate for an ultra-incompressible and hard material and can be compared with c-BN and diamond. The predicted superconducting temperature of the metastable MoN phase of NaCl-B1-type cubic structure is the highest of all refractory carbides and nitrides. The composition of molybdenum nitride films as well as the structures and properties depend on the parameters of the process used to deposit the films. They are also strongly correlated to the electronic structure and chemical bonding. An unusual mixture of metallic, covalent and ionic bonding is found in the stoichiometric compounds.

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Section: Reactive Sputtering Methodssupporting

confidence: 79%

Section: Reactive Sputtering Methodsmentioning

confidence: 93%

Section: Reactive Sputtering Methodsmentioning

confidence: 99%

Section: Reactive Sputtering Methodsmentioning

confidence: 99%

Section: Influence Of the Nitrogen Pressure On The Formation Of Mon Pmentioning

confidence: 99%

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Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

et al. 2015

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Phase Composition and Thermoelectric Properties of Epitaxial CrMoVN Thin Films

Hjort,

Singh,

Chowdhury

et al. 2023

Adv Energy and Sustain Res

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Thin films of CrMoVN are deposited on c‐plane sapphire (Al2O3 (0001)) by direct current reactive magnetron sputtering, to investigate the effects of Mo and V addition to CrN‐based films. All films grow epitaxially, but Mo incorporation affects the crystal structure and nitrogen content. All films in the CrMoVN series are understoichiometric in nitrogen, but largely retain the NaCl B1 structure of stoichiometric CrN films. Addition of vanadium increases the phase‐stability range of the cubic phase, allowing for higher solubility of Mo than what has previously been reported for cubic CrN. The Seebeck coefficient and electrical resistivity are greatly affected by the alloying, showing a decrease of the Seebeck coefficient along with a decrease in resistivity. Cr0.83Mo0.11V0.06Nz shows a 70% increase in power factor (S2σ = 0.22 mW m−1 K−2) compared to the reference CrNz (S2σ = 0.13 mW m−1 K−2).

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Surface Characteristics of MoN_x Thin Films Obtained by Reactive rf Magnetron Sputtering in UHV System

Jeong

Park

Choi

et al. 2015

Bulletin Korean Chem Soc

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Molybdenum nitride (MoN x ) thin films were deposited on p-type Si(1 0 0) wafer using reactive radio frequency magnetron sputtering at various nitrogen gas ratios in an ultra high vacuum (UHV) system. Two metallic phases, Mo(1 1 0) and Mo(2 1 1), were detected from the film obtained without nitrogen gas in the sputter gas. The thickness of the films measured with a surface profiler decreased from 186.0 to 21.5 nm with increasing nitrogen gas ratio in the sputter gas from 0 to 100%, respectively. From the X-ray photoelectron spectroscopy (XPS) analysis, Mo species were further oxidized by the addition of nitrogen gas in the sputter gas. As nitrogen gas was introduced, the portion of Mo 4+ species decreased while those of Mo 5+ and Mo 6+ species increased. As the nitrogen gas ratio in the sputter gas increased, the formation of MoN x thin films was confirmed by N 1s XPS spectra. The conductivity decreased from 927.7 to 97.1 S/cm with 0 and 100% of nitrogen gas ratio, respectively.Keywords: Mo nitride, Radio frequency magnetron sputtering, X-ray photoelectron spectroscopy, X-ray diffraction, Conductivity, Ultra high vacuum IntroductionMolybdenum nitride (MoN x ) thin films have been applied as anodes of Ni batteries, 1 catalysts, 2-4 and diffusion barriers [5][6][7][8][9][10][11][12][13][14] because MoN x thin films have outstanding properties for these applications, such as morphology, 3 low resistivity, 13 and hardness.14 Various methods for synthesizing MoN x thin film have been reported including hydrothermal method, 2 cathodic arc evaporation method, 10 chemical solution method, 11 radio frequency (rf ) sputtering, 13-16 dc sputtering, 5-9,17-19 and hightemperature plasma. 20 Previous studies have adapted sputtering methods to fabricate MoN x thin films because it can be applied in low-temperature environment and for large-area substrate. These advantages make sputtering a more efficient method for industry than others. Previously reported results of fabrication of MoN x films used sputtering methods. [5][6][7][8][9][13][14][15][16][17][18] Anitha et al. prepared MoN x thin film using rf magnetron sputtering with varying nitrogen gas ratio. The crystallization was determined as Mo 2 N with several phases. 13 With increasing nitrogen gas ratio from 0 to 89%, resistivity increased from 0.26 to 6.00 μΩm. Kumar et al. used reactive dc magnetron sputtering for deposition of MoN x films as nitrogen gas flow changed from 0 to 20 sccm. Deposition rate of MoN x thin films decreased as nitrogen flow rate increased.6 Crystallinity changed as nitrogen gas ratio increased from γ-Mo 2 N(1 1 1) through β-Mo 2 N(2 0 0), Mo 3 N 2 (1 1 1), Mo 16 N 7 (4 0 0), β-Mo 2 N(2 2 0), and Mo 5 N 6 (1 1 0), to Mo 16 N 7 (4 0 0). Resistivity of MoN x thin films increased from 3.0 × 10 −9 to 1.8 × 10 −6 Ωm as nitrogen ratio increased from 0 to 33%. MoN x thin film was thermally stable below 600 C. However, they did not give any information about composition of the surface and oxidation states of Mo. In this study, we report the results of...

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Deposition of molybdenum nitride thin films by r.f. reactive magnetron sputtering

Cited by 86 publications

References 20 publications

Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

Phase Composition and Thermoelectric Properties of Epitaxial CrMoVN Thin Films

Surface Characteristics of MoN_x Thin Films Obtained by Reactive rf Magnetron Sputtering in UHV System

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Deposition of molybdenum nitride thin films by r.f. reactive magnetron sputtering

Cited by 86 publications

References 20 publications

Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

Phase Composition and Thermoelectric Properties of Epitaxial CrMoVN Thin Films

Surface Characteristics of MoNx Thin Films Obtained by Reactive rf Magnetron Sputtering in UHV System

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Surface Characteristics of MoN_x Thin Films Obtained by Reactive rf Magnetron Sputtering in UHV System