Deposition of microcrystalline silicon by electron beam excited plasma

Sasaki, Toshiaki; Ryoji, Makoto; Ichikawa, Yukimi; Tohkai, Masakuni

doi:10.1016/s0927-0248(97)00179-7

Cited by 11 publications

(4 citation statements)

References 3 publications

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“…Further a glass substrate can also result in the possibility of impurities diffusing from the substrate into the deposited Si film and the thermal expansion coefficient of both the glass and deposited Si has a large mismatch [18]. Engineering the grain size is a very significant consideration for low temperature depositions and dominates electrical transport properties for Si thin films [19]. Depositions at lower temperatures lead to the formation of micro and crystalline Si grains whereas depositions at higher temperatures results in the evolution of polycrystalline grains [20][21][22].…”

Section: Stabilitymentioning

confidence: 99%

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Growth, characterization and theoretical optical properties of polycrystalline n-silicon thin films for oxide-silicon tandem cells

2021

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With the decline in fossil fuels, hydrogen-based alternatives provide a reliable and clean source for sustainable energy generation. In these endeavors, photochemical splitting for hydrogen production through tandem cells has been the source of much theoretical and experimental research in science. Much focus has been placed on interfacial band gap engineering as one of the most promising routes in the generation of hydrogen. This present work explores sputtering of n-silicon to form the active electrode in a n-Si | n-TiO 2 tandem cell and investigates the effect of variations in sputtering and post sputtering treatment parameters (rapid thermal annealing and long cycle annealing) for successful deposition of crystalline Silicon. The samples were successfully characterized via Raman Spectroscopy, x-ray Diffraction and Optical Transmission Spectroscopy to ascertain prevalent crystalline order and optical band gap, under different sputtering and post-sputtering conditions. Relevant conclusions to ascertain the best possible n-Si deposition parameters indicated the use of post-sputtering annealing to induce and enhance crystallinity but to be cautious as not to incur the loss of Si during the annealing process.

show abstract

Section: Stabilitymentioning

confidence: 99%

“…The initial publishing regarding μ-Si is attributed to a cooperation between Fuji Electric Corporation and Kawasaki Heavy Industries [19]. They reported deposition of μ-Si:H by electron beam excited plasma (EBEP) chemical vapor deposition (CVD) on Corning 7059 glass substrates at temperature of 240 °C.…”

Section: Stabilitymentioning

confidence: 99%

Growth, characterization and theoretical optical properties of polycrystalline n-silicon thin films for oxide-silicon tandem cells

2021

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show abstract

“…Engineering the grain size is a very significant consideration for low temperature depositions and dominates electrical transport properties for Si thin films [20]. Depositions at lower temperatures lead to the formation of micro and crystalline Si grains whereas depositions at higher temperatures results in the evolution of polycrystalline grains [21,22,23].…”

Section: Low-temperature Approach For the Synthesis Of Crystalline Simentioning

confidence: 99%

“…The initial publishing regarding µ-Si is attributed to a cooperation between Fuji Electric Corporation and Kawasaki Heavy Industries [20]. They reported deposition of µ-Si:H by electron beam excited plasma (EBEP) chemical vapor deposition (CVD) on Corning 7059 glass substrates at temperature of 240P o P C. An increase in deposition rate was observed at higher SiHR 4R flow rate but was the process resulted in a decreased crystallinity and grain size.…”

Section: Low-temperature Approach For the Synthesis Of Crystalline Simentioning

confidence: 99%

Growth and Characterization of Polycrystalline Silicon Thin Films for Photocatalytic Splitting of Water in Oxide-Si Tandem Cells

Ali¹,

Zahid²,

Hasan³

et al. 2020

Preprint

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With the decline in fossil fuels, hydrogen-based alternatives provide a reliable and clean source for sustainable energy generation. In these endeavors, photochemical splitting for hydrogen production through tandem cells has been the source of much theoretical and experimental research in science. Much focus has been placed on interfacial band gap engineering as one of the most promising routes in the generation of hydrogen.This present work explores sputtering of n-silicon to form the active electrode in a n-Si | n-TiO2 tandem cell and investigates the effect of variations in sputtering and post sputtering treatment parameters (rapid thermal annealing and long cycle annealing) for successful deposition of crystalline Silicon. The samples were successfully characterized via Raman Spectroscopy, X-ray Diffraction and Optical Transmission Spectroscopy to ascertain prevalent crystalline order and optical band gap, under different sputtering and post-sputtering conditions. Relevant conclusions were drawn to ascertain the best possible deposition parameters of n-Si for photocatalytic water splitting.

show abstract

The influence of filament temperature on crystallographic properties of poly-Si films prepared by the hot-wire CVD method

et al. 2001

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Deposition of microcrystalline silicon by electron beam excited plasma

Cited by 11 publications

References 3 publications

Growth, characterization and theoretical optical properties of polycrystalline n-silicon thin films for oxide-silicon tandem cells

Growth, characterization and theoretical optical properties of polycrystalline n-silicon thin films for oxide-silicon tandem cells

Growth and Characterization of Polycrystalline Silicon Thin Films for Photocatalytic Splitting of Water in Oxide-Si Tandem Cells

The influence of filament temperature on crystallographic properties of poly-Si films prepared by the hot-wire CVD method

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