Deposition of highly photoconductive wide band gap a-SiO:H thin films at a high temperature without H-dilution

Bacıoğlu, Akin; Kodolbaş, Alp Osman; Öktü, Ö.

doi:10.1016/j.solmat.2005.01.001

Cited by 19 publications

(19 citation statements)

References 21 publications

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“…44 Both the increasing amount of hydrogen and-for our case, to a minor extent-oxygen may lead to an increasing valence band (VB) offset. 41,45 This can explain the significant effect on carrier collection we observe in our devices, which will be discussed in Sec. III C.…”

mentioning

confidence: 66%

Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells

Seif

Descoeudres

Filipič

et al. 2014

Journal of Applied Physics

117

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In amorphous/crystalline silicon heterojunction solar cells, optical losses can be mitigated by replacing the amorphous silicon films by wider bandgap amorphous silicon oxide layers. In this article, we use stacks of intrinsic amorphous silicon and amorphous silicon oxide as front intrinsic buffer layers and show that this increases the short-circuit current density by up to 0.43 mA/cm2 due to less reflection and a higher transparency at short wavelengths. Additionally, high open-circuit voltages can be maintained, thanks to good interface passivation. However, we find that the gain in current is more than offset by losses in fill factor. Aided by device simulations, we link these losses to impeded carrier collection fundamentally caused by the increased valence band offset at the amorphous/crystalline interface. Despite this, carrier extraction can be improved by raising the temperature; we find that cells with amorphous silicon oxide window layers show an even lower temperature coefficient than reference heterojunction solar cells (−0.1%/°C relative drop in efficiency, compared to −0.3%/°C). Hence, even though cells with oxide layers do not outperform cells with the standard design at room temperature, at higher temperatures—which are closer to the real working conditions encountered in the field—they show superior performance in both experiment and simulation.

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mentioning

confidence: 66%

Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells

Seif

Descoeudres

Filipič

et al. 2014

Journal of Applied Physics

117

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“…a-SiO x :H (x o2) samples prepared by using PECVD were previously reported to show so high photoconductivity (relative to the other a-Si:H based alloys) that constant photocurrent method (CPM) can be used to deduce the subgap optical absorption spectrum [1][2][3]. As a supplementary graphical presentation, the 20 and 300 K PL spectra and 300 K CPM spectrum of the two a-SiO x :H samples (a-SiO15 and a-SiO16) are plotted in Fig.…”

Section: Tail-to-tail Radiative Recombination In A-sio X :Hmentioning

confidence: 99%

“…The number of carriers thermalizing into deeper states increases. So the drift mobility of carries decreases [1,48] non-radiative lifetime increases [49]. That both non-radiative lifetime and radiative lifetime have comparable values makes PL observable at higher temperatures.…”

Section: Thermal Quenching Of the Tail-to-tail Pl Bandmentioning

confidence: 99%

“…Being very important for solar cell and light sensitive device technology for their comparatively higher photoconductivity to the other a-Si:H based alloys such as a-Si 1 À x C x :H, [1][2][3] hydrogenated amorphous silicon-oxygen alloys (a-SiO x :H; x o2) have been investigated extensively for their electronic and optical properties [1,[3][4][5][6][7][8]. On the other hand, silicon dioxide (SiO 2 ) has a crucial role in MOS technology [9 À 1 2].…”

Section: Introductionmentioning

confidence: 99%

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Temperature dependent photoluminescence of PECVD a-SiOx:H (x<2)

Bacıoğlu

Kodolbaş

Öktü

2010

Journal of Luminescence

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“…The most common studies of silicon suboxides are related to the Si-SiO 2 interface, the key element of CMOS technology [1,2]. Other examples of SiO x applications include protective coating [3], solar cells [4], and light emitting diodes [5] (a-SiO x :H).…”

Section: Introductionmentioning

confidence: 99%

Computational Design of Silicon Suboxides: Chemical and Mechanical Forces on the Atomic Scale

Korkin¹,

Bartlett

Karasiev

et al. 2006

J Computer-Aided Mater Des

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Silicon suboxides play an important role in different industrial applications, particularly in the form of the Si-SiO 2 interface, which is one of the key elements in present day microelectronics and potentially in future nano-electronics as well. This paper focuses on the chemical and mechanical effects related to the existence of different oxidation states of Si atoms in SiO x systems with various Si:O composition and topology, such as O atoms in Si, the Si-SiO 2 interface, and O vacancies in SiO 2 . We compare the stress-strain relation in SiO 2 interfaces with (100), (111) and (110) surfaces, the relative stability of oxygen vacancies at different locations in Si-SiO 2 layers and defects in Si and SiO 2 crystals related to O migration. Our study is based on ab initio computations of molecular and periodic systems with both localized and plane wave basis sets.

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Deposition of highly photoconductive wide band gap a-SiO:H thin films at a high temperature without H-dilution

Cited by 19 publications

References 21 publications

Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells

Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells

Temperature dependent photoluminescence of PECVD a-SiOx:H (x<2)

Computational Design of Silicon Suboxides: Chemical and Mechanical Forces on the Atomic Scale

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