2011
DOI: 10.7567/jjap.50.07hd09
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Deposition of Highly Oriented Ta2O5Piezoelectric Thin Films on Silicon for Fabricating Film Bulk Acoustic Resonator Structure by RF Magnetron Sputtering

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Cited by 2 publications
(2 citation statements)
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“…With the exception of T S , these parameters were similar to those in our previous study, [28][29][30] in which X-axis-oriented Ta 2 O 5 piezoelectric thin films were deposited using the same RF magnetron sputtering system. The deposition rate was 0.31-0.41 µm=h.…”
Section: Sample Fabricationsupporting
confidence: 73%
“…With the exception of T S , these parameters were similar to those in our previous study, [28][29][30] in which X-axis-oriented Ta 2 O 5 piezoelectric thin films were deposited using the same RF magnetron sputtering system. The deposition rate was 0.31-0.41 µm=h.…”
Section: Sample Fabricationsupporting
confidence: 73%
“…24,25) Moreover, they evaluated the bulk acoustic wave (BAW) properties of a Ta 2 O 5 thin film on a silicon substrate. 26) However, a large propagation loss (PL) for the R-SAW or BAW was observed in the X-axis-oriented Ta 2 O 5 thin films. The large PL is considered to be due to the crystal grain boundaries inside the thin films.…”
Section: Introductionmentioning
confidence: 99%