Deposition of highly oriented Ta<inf>2</inf>O<inf>5</inf> piezoelectric thin films on silicon for fabricating film bulk acoustic resonator structure by RF magnetron sputtering
Abstract:X-axis-oriented tantalum pentoxide (Ta 2 O 5 ) piezoelectric thin films were deposited on Si substrates using an RF magnetron sputtering system with an LTS cathode and an O 2 -radical source with the aim of obtaining an FBAR structure. First, to clarify the fabrication condition necessary for obtaining a strongly piezoelectric property, the degree of orientation and the K 2 for the Rayleigh-type SAW were evaluated. It was found that the Ta 2 O 5 thin film deposited on the unprocessed Si(100) substrate has a si… Show more
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