Deposition of high quality GaAs films at fast rates in the LP-CVD system

Epitaxial growth of thick GaAs on orientation-patterned wafers for nonlinear optical applications

“…An understanding of the kinetics of HVPE growth has been established at both atmospheric pressure [11,12] and low pressure [7,13]. We have characterized the behavior in our system and found good agreement with previously published results.…”

“…We have characterized the behavior in our system and found good agreement with previously published results. The reaction producing Ga at the surface is GaCl þ 1 2 H 2 Ð Ga þ HCl; (1) and As is produced either by a decomposition of AsH 3 in the gas stream [14] or by a direct reaction with GaCl on the surface [7]. Calculation of the vapor supersaturation as a function of temperature and gas composition yields a measure of the driving force for growth.…”

“…The growth technique discussed here is well-suited for the production of OP-GaAs, due to its high purity and rapid growth rate [7]. HVPE [8] domain structures, has the advantage of rapid growth under near-equilibrium conditions.…”

“…In this paper we describe the application of a low-pressure hydride vapor phase epitaxy (LP-HVPE) technique [7] to the growth of thick GaAs on template wafers. The orientation-patterned GaAs (OP-GaAs) templates were provided by the research groups of M. Fejer at Stanford University and P. Schunemann at BAE Systems.…”

Growth of mm-thick orientation-patterned GaAs for IR and THZ generation

“…Since the thicknesses necessary for OP-GaAs are not practically attainable using molecular beam epitaxy (MBE) or organo-metallic vapor phase epitaxy (OMVPE), we used low-pressure hydride vapor phase epitaxy (HVPE), which can have much higher growth rates [21]. To produce mm-thick layers, it is desirable to establish a rate of at least 100 mm/h and maintain that rate for approximately 10 h. Due to the tendency for parasitic deposition of GaAs on the quartz reactor walls, the total length of productive growth time may be limited as the vapor becomes depleted.…”