Deposition of dielectrics using a matrix distributed electron cyclotron resonance plasma enhanced chemical vapor deposition system

Botha, Roelene; Ibrahim, Bicher Haj; Bulkin, Pavel; Drévillon, B.

doi:10.1016/j.tsf.2006.11.184

Cited by 9 publications

(4 citation statements)

References 13 publications

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“…Figure 1 shows the different parts of the reactor. A detailed description of this reactor is given in references [6,7]. The used UVISEL ellipsometer allows in-situ measurement of 32 different wavelengths, with a sampling period lower than one second.…”

Section: The Reactormentioning

confidence: 99%

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Multilayer optical filters control by multi‐channel kinetic ellipsometry

Ibrahim

Botha

Bulkin

et al. 2008

Phys. Status Solidi (c)

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The use of multi‐wavelength kinetic ellipsometry control for the deposition of multilayer filters is presented. Two different control methods are described and their use for the fabrication of different types of optical filters is illustrated. We fit the ellipsometric data with a model and adjust the physical thickness during deposition to ensure the conservation of the optical thickness. In order to illustrate this method and to show its importance in the case of periodic structures or single layer control, a Bragg mirror and a resonator layer in a Fabry‐Perot filter were grown using Matrix Distributed Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (MDECR‐PECVD). The use of fitting both the index and thickness for control of the physical thickness is also shown. The importance of this method for manufacturing non‐periodic multilayer structures is demonstrated by the controlled deposition of an antireflection coating. The different features of these two methods are presented. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: The Reactormentioning

confidence: 99%

“…This configuration allows a uniform deposition of the order of ±3% on 20 cm diameter substrates. The deposition area can be enlarged by increasing the number of antennas [7].…”

mentioning

confidence: 99%

Multilayer optical filters control by multi‐channel kinetic ellipsometry

Ibrahim

Botha

Bulkin

et al. 2008

Phys. Status Solidi (c)

Self Cite

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show abstract

“…Plasma deposited silicon-based thin films have been widely studied for their optical or dielectric properties and their possible applications as anticorrosion or passivation layers [9][10][11][12][13][14][15][16]. For industrial processes and practical purposes high deposition rates and homogeneity in terms of thickness, composition and properties are needed.…”

Section: Introductionmentioning

confidence: 99%

“…Consequently, a great interest was devoted to deposition rate and uniformity and the optimization of the plasma deposition process. Thus, stoichiometric silicon oxide films were obtained with growth rates exceeding 130 nm/min and uniformity better than 3.3% across a 200 mm wafer using a matrix distributed electron cyclotron resonance (MDECR) reactor [9]. An integrated distributed electron cyclotron resonance (IDECR) reactor allows to deposit SiO 2 and Si 3 N 4 films with growth rates of 300 nm/min and 30 nm/min, respectively [10,11] and a-Si:H could be deposited by a cascaded arc plasma with deposition rates of 600 nm/min [12].…”

Section: Introductionmentioning

confidence: 99%