Deposition of diamond-like carbon films on aluminium substrates by RF-PECVD technique: Influence of process parameters

Effect of nitrogen and ammonia on transfer and deposition of hydrocarbon radicals in different regions of hollow-cathode glow discharge

“…To determine the carbon deposition rate, polished Si(111), W, and Mo wafers were used as a substrate, and carbon erosion processes were studied with hard, diamond like a C:H films on molybdenum substrates (a C:H/Mo) obtained by PECVD [11]. Samples were mounted on the inner walls of the hollow cathode and the discharge tube in the positive column and the afterglow.…”

Numerical Analysis of Substrate‐Incident Carbon Flux in Low‐Pressure Radio‐Frequency CH4 Plasmas for Deposition of Diamond‐Like Carbon Films

“…In this section, we discuss the effects of two external parameters, namely, input power density and gas pressure during DLC film formation by plasma CVD, on the composition of the charged particles in the CH 4 plasma. Because a relatively high gas flow rate is used in order to assure that the film formation is limited by source gas depletion during high-speed film formation [18,20,21], we likewise discuss the effects of the gas flow rate. Figures 3(a)-(c) show the input power, gas pressure, and gas flow rate dependency of the charged particle number density (spatiotemporal averaged values) in the plasma.…”

“…In this method, higher gas pressures and greater input power are fully utilized in order to increase the plasma density. The input power density (the input power divided by the electrode surface area) and gas pressure in experiments by Takaoka and colleagues involving ultrafast formation of hard DLC films at 150 μm/h at a pressures 20 GPa were about 40 W‐cm 2 and 80 Pa. Ravi and colleagues found that typical input power densities and gas pressures in low‐speed DLC film formation with RF parallel‐plate plasmas were 0.25 W‐cm −2 to 7.5 W‐cm −2 and 1 Pa to 5 Pa (7.5 mTorr to 0.6 mTorr). Thus, for ultrafast DLC film formation, the gas pressure must be near the maximum found in low‐speed film formation.…”

Effect of incorporation of deuterium on vacancy-type defects of a-C:H films prepared by plasma CVD

“…The properties of the a-C:H films depend on the deposition technique employed and the growth conditions [6,7]. The incorporation of different elements during the film growth is a significant method used to improve the properties of the film.…”