Deposition of Cathode Coupled Plasma Enhanced Chemical Vapor Deposition SiN Films Using Liquid Source Material

Ohgishi, Atsufumi; Motoyama, Shin-ichi; Sawai, Mikio; Tatsuta, Toshiaki; Tsuji, Osamu

doi:10.1143/jjap.42.l1090

Cited by 15 publications

(11 citation statements)

References 9 publications

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“…HMDS plasma polymerization was extensively studied using different frequencies power supplies, but only films with low amount of carbon radicals are normally used, such as for surface protection [15][16][17] . Recently, other applications for plasma HMDS thin films have arisen due to the interesting properties that films with high amount of carbon demonstrate such as high hydrophobicity, resistance to UV radiation, acid and bases etching and adhesion to several substrates [18][19][20] .…”

Section: Introductionmentioning

confidence: 99%

Hydrophobic plasma polymerized hexamethyldisilazane thin films: characterization and uses

Carvalho

Silva

et al. 2006

Mat. Res.

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Hexametildisilazane (HMDS) plasma polymerized thin films obtained using low frequency power supplies can be used to make adsorbent films and turn surfaces hydrophobic. The aim of this work was to verify the hydrophobicity and adsorption properties of HMDS thin films (with and without the addition of oxygen, resulting in double or single layer films) obtained using an inductive reactor powered with a 13.56 MHz power supply. Single and double layer thin films were deposited on silicon for film characterization, polypropylene (PP) for ultraviolet (UVA/UVC) resistance tests, piezoelectric quartz crystal for adsorption tests. The double layer (intermixing) of HMDS plasma polymerized films and HMDS plasma oxidized surfaces showed a non-continuous layer. The films showed good adhesion to all substrates. Infrared analysis showed the presence of CHn, SiCH3, SiNSi and SiCH2Si within the films. Contact angle measurements with water showed hydrophobic surfaces. UVA/UVC exposure of the films resulted in the presence of cross-linking on carbonic radicals and SiCH2Si formation, which resulted in a possible protection of PP against UVA/UVC for a duration of up to two weeks. Adsorption tests showed that all organic reactants were adsorbed but not water. Plasma etching (PE) using O2 showed that even after 15 minutes of exposure the films do not change their hydrophobic characteristic but were oxidized. The results point out that HMDS films can be used: for ultraviolet protection of flexible organic substrates, such as PP, for sensor and/or preconcentrator development, due to their adsorption properties, and in spatial applications due to resistance for O2 attack in hostile conditions, such as plasma etching

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Section: Introductionmentioning

confidence: 99%

Hydrophobic plasma polymerized hexamethyldisilazane thin films: characterization and uses

Carvalho

Silva

et al. 2006

Mat. Res.

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“…First, SiO 2 is deposited on a wafer as a passivation film. Then SiCN films are deposited by plasma enhanced chemical vapor deposition (PECVD) using hydrogen, ammonia, and hexamethyldisilazane (HMDS) vapor [7], shown in Fig. 2(a).…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs

Yoshida¹,

Kobayashi²,

Otsuji³

et al. 2014

Solid-State Electronics

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“…First, SiO 2 is deposited on a wafer as a passivation film. Then SiCN films are deposited by PECVD using hydrogen, ammonia, and HMDS vapor [7], shown in Fig. 2(a).…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs

Yoshida

Kobayashi

Otsuji

et al. 2013

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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We report an impact of the stem height of T-gate electrodes on the parasitic gate delay time in InGaAs high electron mobility transistors (HEMTs). Since T-gates with higher stem height make the parasitic gate capacitance smaller, the higher stem height is expected to minimize the parasitic gate delay. However, a systematic study using the devices with different height in the stems of T-gates reveals that the parasitic gate delay decreases with the parasitic gate capacitance only at a drain voltage around the knee voltage and it becomes less sensitive to the parasitic capacitance by the T-gate when the device is operated in the deep saturation region at high drain bias voltage. This result suggests a design strategy for T-gate electrodes so that the tradeoff between the gate resistance and gate capacitance must be considered seriously in the devices for low-voltage applications, while one has more freedom to use the T-gate electrode with a large head in the devices for high-voltage applications.I.

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Deposition of Cathode Coupled Plasma Enhanced Chemical Vapor Deposition SiN Films Using Liquid Source Material

Cited by 15 publications

References 9 publications

Hydrophobic plasma polymerized hexamethyldisilazane thin films: characterization and uses

Hydrophobic plasma polymerized hexamethyldisilazane thin films: characterization and uses

Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs

Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs

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