Deposition of carbon based materials by continuous and pulsed discharges

Abstract

This review surveys the recent developments in the plasma deposition of polycrystalline diamond (PCD) films from highly diluted (1%CH 4 in H 2 ) gas mixture and superhydrophobic fluorocarbon films from C 2 F 4 gas. Specifically, the pulsed plasmas are also used and examined at different duty cycles and pulse periods. Emphasis is given to the role of pulsed plasmas with respect to continuous ones in controlling the gas surface interaction and the growth chemistry and in determining the material properties. The obtained materials have been characterised using a wide range of methods: scanning electron microscopy, atomic force microscopy, Raman spectroscopy, X-ray diffractometry, spectroscopic ellipsometry, water contact angle, X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Power modulation affects the PCD film morphology but deteriorates their optical and structural properties: the refractive index and the quality factor of continuous films are better than pulsed ones. As for fluorocarbon films, the control of both the plasma phase and the film deposited is improved under pulsed conditions. The pulsed plasmas, contrary to the continuous ones, allow to tune the CF 2 growth precursor and correspondingly the composition, structure and morphology of the film, exhibiting a superwater repellent surface with contact angles of up to 170u.

Hierarchical micro and nano structured, hydrophilic, superhydrophobic and superoleophobic surfaces incorporated in microfluidics, microarrays and lab on chip microsystems

“…In addition to the early works mentioned above, we note also the work of Favia [54], and Milella for modulated plasmas exploring the mechanisms to deposit ribbon-like or bumpy fluorocarbon layers [55], as reviewed also by the same author later on [56]. Vacuum deposition of superhydrophobic coatings was also reviewed by Cigala et al [57], and Kylian et al [18]. One of the advantages of plasma deposition is that it can be used at atmospheric pressures as well.…”

Pulsed plasma etching for semiconductor manufacturing

“…Besides etching, pulsed plasmas have also been used in plasma enhanced chemical vapour deposition (PECVD) in an effort to tailor the deposited film microstructure and resulting properties [122][123][124].…”

Influence of chromium buffer layer on Cr/ta-C composite films

“…Among various film deposition techniques, filtered cathodic vacuum arc (FCVA) system with metal vapour vacuum arc (MEVVA) source is an approach particularly favourable for synthesising ta-C film on sliding mechanical components and yet sustains a green manufacturing environment. 5,6 Unfortunately, the sp 3 -C bonds formed in the process tends to induce compressive stress as high as dozens of GPa. This subsequently leads to poor adhesion onto the substrate and hence limits its fields of application.…”

“…It contains over 60% of sp 3 -C bonding and subsequently endues its remarkable property with super hardness almost similar to diamond. 1,2 The sp 2 -C bonds improve its tribological behaviour and bring wider applicable range [3][4][5] as compared with diamond film. Among various film deposition techniques, filtered cathodic vacuum arc (FCVA) system with metal vapour vacuum arc (MEVVA) source is an approach particularly favourable for synthesising ta-C film on sliding mechanical components and yet sustains a green manufacturing environment.…”