Deposition of amorphous carbon using a shunting arc discharge

Yukimura, Ken; Kumagai, Motoya; Kumagai, Masao; Saito, Hidenori; Kohata, Mamoru; Takaki, Koichi

doi:10.1016/s0257-8972(03)00368-2

Cited by 20 publications

(7 citation statements)

References 12 publications

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“…The plasma-based ion implantation & deposition (PBII&D) using the shunting arc with a carbon rod as an ion source have been used for diamond-like carbon (DLC) film deposition (5) . The experimental results show that the carbon layer was deposited on the silicon substrate with the deposition rate of 1 nm/min and amorphous structure was confirmed in the deposited film using Raman spectra (6) . One reason of the low deposition rate of 1 nm/min is that the plasma spreads out from the source rod towards an omni-direction (6) .…”

Section: Introductionmentioning

confidence: 88%

“…The experimental results show that the carbon layer was deposited on the silicon substrate with the deposition rate of 1 nm/min and amorphous structure was confirmed in the deposited film using Raman spectra (6) . One reason of the low deposition rate of 1 nm/min is that the plasma spreads out from the source rod towards an omni-direction (6) . For improvement of deposition rate, a magnetically driven shunting arc using a pair of carbon electrodes has been newly developed (7) .…”

Section: Introductionmentioning

confidence: 88%

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Production of Nitrogen-containing Carbon Plasma using Shunting Arc Discharge for Carbon Nitride Films Preparation

et al. 2007

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A magnetically driven carbon shunting arc discharge was generated in nitrogen gas circumstance and amorphous carbon nitride (a-CN x) films were prepared using plasma-based ion implantation technique. A silicon substrate was immersed into the plasma, and a series of pulse voltage was applied to the substrate synchronizing with an ignition of the shunting arc with a peak current of 2.1 kA. The ambient nitrogen gas pressure was varied from 0.02 to 2 Pa. The shunting arc plasma was successfully produced and was accelerated along carbon rails. Rod heating energy to generate the shunting arc had the minimum value for variation of the ambient gas pressure. A spectroscopic measurement from the plasma light emission showed that the produced plasma contained nitrogen particles in ambient nitrogen gas circumstance. X-ray photoelectron spectroscopy analysis showed that the prepared carbon films contained nitrogen and was obtained to be N/C ratio of 0.35 at 2 Pa nitrogen gas pressure.

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Section: Introductionmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 88%

Production of Nitrogen-containing Carbon Plasma using Shunting Arc Discharge for Carbon Nitride Films Preparation

et al. 2007

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“…[2][3][4] In addition, DLC films have very controllable preparation processes compared to diamond and other carbon nanostructures, and present various structures when the sp 2 and sp 3 hybridized bonds in the DLC matrix are tuned. [11][12][13][14] An anode-layer linear ion source (LIS) is of the closed-drift anode-layer design and can operate without an electron emitter and accelerating grids, and thus can readily be scaled to any desired length and applied in industry for large-area surface processes and DLC film deposition. [5][6][7][8][9] The key process in DLC deposition is the formation of sp 3 -C hybridized bonds, which is believed to significantly depend on the energy of the carbon ions, and the optimum energy for sp 3 -C formation is thought to be between 100 and 150 eV per carbon atom.…”

Section: Introductionmentioning

confidence: 99%

Growth properties and resistive switching effects of diamond-like carbon films deposited using a linear ion source

Dai

Wang

2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inSuperhard behaviour, low residual stress, and unique structure in diamond-like carbon films by simple bilayer approach J. Appl. Phys. 112, 023518 (2012); 10.1063/1.4739287 Synergism between low-energy neutral particles and energetic ions in the pulsed glow discharge deposition of diamond-like carbon films Electron field-emission from diamond-like carbon films grown by a saddle field fast atom beam source Structural and mechanical properties of diamond-like carbon films deposited by direct current magnetron sputtering J. Vac. Sci. Technol. A 21, 851 (2003); 10.1116/1.1575231Effects of increasing nitrogen concentration on the structure of carbon nitride films deposited by ion beam assisted deposition Diamond-like carbon (DLC) films were prepared using an anode-layer linear ion beam source with C 2 H 2 as the precursor and various negative bias voltages. The growth properties, microstructures, mechanical properties, and the resistive switching behaviors of the as-deposited DLC films were investigated as a function of bias voltage. The results showed that adjusting the bias voltage could vary the carbon atomic bonding structure (sp 3 /sp 2 carbon hybridized bonding) of the films. The sp 3 /sp 2 ratio initially increased as bias voltage increased and then decreased once the bias voltage exceeded À100 V. The variations in the film hardness and residual stress at different bias voltages were similar in profile to the sp 3 bond fractions, indicating that both the residual stress and the mechanical properties of the DLC films were highly dependent on sp 3 -C bonding structures. The resistive switching characteristics of the DLC films were studied via a Cu/DLC/Pt cell structure. It was found that the bias voltages had a significant influence on the resistive switching behaviors of the DLC films. The film deposited with a bias voltage of 0 V showed excellent resistive switching effects with an ON/OFF ratio higher than 70 and device yield of about 90%, while the films deposited with higher bias voltages presented poor resistive switching effects. The sp 2 /sp 3 ratio of the films was believed to account for the favorable resistive switching performances.

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“…6) Accordingly, the shunting arc is a promising method to prepare droplet-free films. 7,8) Plasma-based ion-implantation and deposition (PBII&D), which is a recent trend enables implantation of ions with high energy into three-dimensional workpieces, 9,10) is a hybrid process including deposition and ion implantation. 11) The metallic plasma source plays an important role in the process, and reactive deposition is also desired to prepare various films to suit each industrial usage.…”

Section: Introductionmentioning

confidence: 99%

Production of Titanium-Containing Carbon Plasma Using Shunting Arc Discharge for Hybrid Film Deposition

Takaki¹,

Murakami²,

Mukaigawa³

et al. 2010

Jpn. J. Appl. Phys.

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A carbon-shunting arc discharge was generated with a titanium cathode for titanium-containing carbon plasma production to deposit carbon-based hybrid films. A carbon rod of 2 mm diameter and 40 mm length was employed for generation of the carbon shunting arc discharge. A silicon substrate was immersed into the plasma, and a series of negative pulse voltages were applied to the substrate holder synchronized with shunting arc discharge ignition. The cathode side rod holder material was changed from carbon to titanium to supply holder material particles into the carbon shunting arc plasma. The shunting arc plasma was successfully produced for both rod holder materials. Heating energy to generate the shunting arc was reduced using titanium as the cathode side holder material. A spectroscopic measurement from plasma light emission showed that the produced plasma contained titanium ions at employing titanium as the cathode material. The ions contained in the produced plasma were extracted with -2.0 kV negative pulse voltage. The ion current at the titanium cathode was larger value than that of the carbon cathode. X-ray photoelectron spectroscopy showed that the prepared carbon films contained titanium and showed a Ti/C ratio of 0.099 at 1200 V charging voltage of a 200 µF capacitor.

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Deposition of amorphous carbon using a shunting arc discharge

Cited by 20 publications

References 12 publications

Production of Nitrogen-containing Carbon Plasma using Shunting Arc Discharge for Carbon Nitride Films Preparation

Production of Nitrogen-containing Carbon Plasma using Shunting Arc Discharge for Carbon Nitride Films Preparation

Growth properties and resistive switching effects of diamond-like carbon films deposited using a linear ion source

Production of Titanium-Containing Carbon Plasma Using Shunting Arc Discharge for Hybrid Film Deposition

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