Deposition of alpha-WC/a-C nanocomposite thin films by hot-filament CVD

THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

“…Firstly, Palmquist et al [24] used the same pressure but bias voltage was from -300 V to -350 V and, hardness was in the range (14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25) GPa. This is less by 30-50 % compared to our values.…”

“…It is these characteristics of WC which improve the other properties of materials [13]. WC layers have been deposited using chemical vapor deposition (CVD) [14][15][16][17][18][19][20][21][22] and physical vapor deposition (PVD) techniques [1][2][3][4][5][6][7][8][9][10][11][12][13][23][24][25][26][27][28][29][30][31]. Plasma enhanced CVD of tungsten hexacarbonyl has also been used for the deposition of WC/C layers at lower temperatures compared to those used in CVD techniques [15][16][17][18][19][20][21].…”

Microstructure and Mechanical Properties of Annealed WC/C PECVD Coatings Deposited Using Hexacarbonyl of W with Different Gases

“…Other effective methods of sputtering include High Target Utilization Sputtering (HiTUS) [15] and High-Power Impulse Magnetron Sputtering (HiPIMS) [3]. WC coatings can be deposited by using the CVD method [16,17]. A disadvantage of the CVD method is its high depositing temperatures, ranging from 800 to 1200 • C, which exclude, for example, aluminum alloy from being coated.…”

The Effect of Annealing Temperatures on Selected Properties of WC/C Coatings, Deposited Using Hexacarbonyl Wolfram in an N2-SiH4 Atmosphere

“…Reactive sputtering using W, C, or WC target is frequently carried out with additional gases, such as hydrocarbon [6], N2, or SiH4 [7,8,17]. In addition to other existing progressive PVD sputtering methods, two other methods for such WC coatings are high target utilization sputtering (HiTUS) [18], high-power impulse magnetron sputtering (HiPIMS) [7], and the chemical vapor deposition (CVD) technique [19,20].…”