Deposition of a TMDSO-Based Film by a Non-Equilibrium Atmospheric Pressure DC Plasma Jet

Abstract

This work deals with the deposition of thin films using an atmospheric pressure direct current nitrogen plasma jet with tetramethyldisiloxane as precursor. The effect of O 2 flow and plasma discharge power on film deposition rate and film chemical characteristics is investigated in detail by surface profilometry, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. It is found that a higher deposition rate is obtained at higher oxygen flow rates and higher discharge powers. Increasing discharge power shows a certain amount of capability to transfer low oxygen content bonds to high oxygen content bonds. Organic films can be deposited in a pure nitrogen atmosphere. The film chemical composition can be tuned to a more inorganic structure by admixture of O 2 leading to an increase in SiO 4 units at high oxygen flow rates.

Engineering of Composite Organosilicon Thin Films with Embedded Silver Nanoparticles via Atmospheric Pressure Plasma Process for Antibacterial Activity

“…The deconvolution of the high resolution Si2p peaks is carried out by Casa XPS software. Following four components have been considered: (CH 3 ) 3 SiO, (CH 3 ) 2 SiO 2 , CH 3 SiO 3 , and SiO 4 at binding energies of 101.5, 102.2, 102.8, and 103.4 eV, respectively . The full width at half maximum of the fitted Si2p components is kept constant at 1.6 ± 0.1 eV and the Gaussian to Lorentzian ratio is 30%.…”

“…The deposition process, as described elsewhere is performed on Si wafers (Siegert Wafer) of 0.5 mm thickness . The substrate of 7 mm × 7 mm size is cleaned with ethanol in ultrasonic bath for 20 min before the deposition.…”

“…The substrate of 7 mm × 7 mm size is cleaned with ethanol in ultrasonic bath for 20 min before the deposition. The atmospheric pressure DC plasma generated in N 2 with admixing of O 2 and tetramethyldisiloxane (TMDSO; Sigma–Aldrich) as the organosilicon precursor is used for the deposition . The thickness of the films in this work is 700 nm.…”

“…The deposition process, as described elsewhere is performed on Si wafers (Siegert Wafer) of 0.5 mm thickness. [29] The substrate of 7 mm  7 mm size is cleaned with ethanol in ultrasonic bath for 20 min before the deposition. The atmospheric pressure DC plasma generated in N 2 with admixing of O 2 and tetramethyldisiloxane (TMDSO; Sigma-Aldrich) as the organosilicon precursor is used for the deposition.…”

“…The atmospheric pressure DC plasma generated in N 2 with admixing of O 2 and tetramethyldisiloxane (TMDSO; Sigma-Aldrich) as the organosilicon precursor is used for the deposition. [29] The thickness of the films in this work is 700 nm. AgNPs (Sigma-Aldrich) of 100 nm size with a purity of 99.5% (trace metal basis) are used through experiments as purchased.…”