Deposition and properties of ZrNx films produced by radio frequency reactive magnetron sputtering

Thermal oxidation and nitridation of sputtered Zr thin film on Si via N2O gas

“…2), peak related to this compound can be identified at binding energy of 395.9 eV [34] for all investigated samples, except for 5-min oxidized sample. Based on the analyses of the Zr 3d, Si 2p, O 1s, and N 1s spectra in Figs.…”

“…Subsequently, for a narrow scan, a passing energy of 20 eV for 5 min was used to scan through the binding-energy range of interest. The recorded C 1s peak due to the adventitious carbon-based contaminant on the surface, with respect to the literature value of 284.6 eV [33,34], was used as a reference to compensate for the charging effect of the XPS spectra. Surface charge and linear background were corrected with the help of CasaXPS software (version 2.3.15) before deconvolution of the XPS spectra was performed.…”

Properties of thermally oxidized and nitrided Zr-oxynitride thin film on 4H–SiC in diluted N2O ambient

“…Subsequently, for a narrow scan, a pass energy of 20 eV for 5 min was used to scan through the binding-energy range of interest. The recorded C 1s peak due to the adventitious carbonbased contaminant on the surface, with respect to the literature value of 284.6 eV [28,29], was used as a reference to compensate for charging effect of the XPS spectra. Surface charge and linear background were corrected with the assistance of CasaXPS software (version 2.3.15) before deconvolution of the XPS spectra was performed.…”

“…5(a)e(d) shows the N 1s spectra that are fitted by four components, i.e. ZreOeN, SieN, CeN, and/or ZreN, with binding energies of 399.2 eV [38,39,41], 397.0e397.1 eV [9,23,45], 396.5 eV [46], and 395.9 eV [9,29], respectively. The intensity of these peaks decreases with the increasing of etching time, until it is totally faded away.…”

Effect of oxidation temperature on physical properties of thermally grown oxide on GaN in N2O ambient

“…Then, for high resolution analysis, a pass-energy of 20 eV was employed to scan through the binding-energy range of interest. The C 1s peak recorded due to the adventitious carbon-based contaminant on the surface, with respect to the literature value of 284.6 eV, was used as a reference to compensate for the charging effect of the XPS spectra [63,64]. After corrected the surface charge and linear background, the deconvolution of XPS spectra was performed with the help of CasaXPS software (version 2.3.15).…”