Deposition and physical characterization of thin films of lithium niobate on silicon substrates

Baumann, R.; Rost, Timothy A.; Rabson, Thomas A.

doi:10.1063/1.346435

Cited by 32 publications

(5 citation statements)

References 9 publications

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“…This technique can be extended to other applications of SAWs in semiconductor electro-optical devices. Alternative piezoelectric films, such as LiNO 3 [24] and AlN [25] can also be used to generate SAWs. The technique presented here enables the generation of SAWs in doped semiconductor structures, opening a new window for hybrid acoustic devices.…”

Section: Discussionmentioning

confidence: 99%

Generation of surface acoustic waves on doped semiconductor substrates

Yuan

Hubert

Rauwerdink

et al. 2017

J. Phys. D: Appl. Phys.

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We report on the electrical generation of surface acoustic waves (SAWs) on doped semiconductor substrates. This is implemented by using interdigital transducers (IDTs) placed on piezoelectric ZnO films sputtered onto evaporated thin metal layers. Two material systems are investigated, namely ZnO/Au/GaAs and ZnO/Ni/InP. The rf-field applied to the transducer is electrically screened by the highly conductive metal film underneath the ZnO film without any extra ohmic losses. As a result, absorption of the rf-field by the mobile carriers in the lossy doped region underneath the IDT is avoided, ensuring efficient SAW generation. We find that the growth temperature of the ZnO film on the metal layer affects its structure and, thus, the efficiency of SAW generation. With this technique, the SAW active layers can be placed close to doped layers, expanding the application range of SAWs in semiconductor devices.

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Section: Discussionmentioning

confidence: 99%

Generation of surface acoustic waves on doped semiconductor substrates

Yuan

Hubert

Rauwerdink

et al. 2017

J. Phys. D: Appl. Phys.

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“…From literature it is known that LiNbO 3 sputtered on silicon produces nanometer thick silicon oxides layers at the LiNbO 3 / Si interface. 59 The existence of 2-3 nm thin Li-Si-O layers between the Si and LiNbO 3 layers was identified by Auger electron spectroscopy and Fourier transform infrared spectroscopy. 2 For the simulations, the presence of about 2 nm thin interface layers give the best fitting results.…”

Section: )mentioning

confidence: 99%

Neutron Reflectometry to Measure In Situ Li Permeation through Ultrathin Silicon Layers and Interfaces

Hüger

Stahn

Schmidt

2015

J. Electrochem. Soc.

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High-intensity specular neutron reflectometry was used to measure atomic transport processes in the solid state in-situ. As a model system, Li transport through ultrathin amorphous silicon layers (5 nm) and adjacent lithium silicate interfaces relevant for battery applications is studied. For the experiments a multilayer structure consisting of five [Si/natLiNbO3/Si/6LiNbO3] units was investigated, which was produced by ion beam sputtering. LiNbO3 is solely used as a tracer reservoir. Thin lithium silicate layers are formed at Si/LiNbO3 interfaces during sputtering. Two types of Bragg peaks are detectable in the neutron reflectivity pattern. One originates from the double layer periodicity introduced by the LiNbO3/Si chemical contrast, the other from the four-layer periodicity introduced by the Li isotope contrast of the natLiNbO3 and 6LiNbO3 layers. If the multilayer arrangement is annealed at 240°C, Li diffusion through the silicon layer between the two isotope reservoirs is induced and only the Bragg peak due to Li isotope contrast variation is reduced, while the peak due to chemical contrast variation remains constant. High-intensity specular neutron reflectometry allows to record reflectivity patterns within some minutes, which is the base for continuous in-situ measurements during annealing. Simulation tools allow to derive the Li permeability (diffusivity x solubility) in silicon.

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“…Using AES, Si–Si rich regions were detected in the middle of the silicon layer and Si–O rich regions at the Si/LiNbO 3 interface (Figure a) . From literature it is known that LiNbO 3 sputtered on Si wafer produces nanometer thick silicon oxide layers at the LiNbO 3 /Si interface . FTIR performed on the multilayer system, showed a shift of the Si–O vibrations from 1100 to 1030 cm –1 (Figure b) compared to pure SiO 2 (FTIR band at 1100 cm –1 ), , which is typical for Li–Si–O material (FTIR band at ∼1030 cm –1 ) .…”

mentioning

confidence: 94%

“…54 From literature it is known that LiNbO 3 sputtered on Si wafer produces nanometer thick silicon oxide layers at the LiNbO 3 /Si interface. 55 FTIR performed on the multilayer system, showed a shift of the Si−O vibrations from 1100 to 1030 cm −1 (Figure 2b) compared to pure SiO 2 (FTIR band at 1100 cm −1 ), 56,57 which is typical for Li−Si−O material (FTIR band at ∼1030 cm −1 ). 58 By FTIR it is further found that annealing at 225 °C for 10 min shifts and increases the Si−O band emissions only slightly, presumably due to some Si−O bond strengthening by local mass densification.…”

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confidence: 97%

Lithium Transport through Nanosized Amorphous Silicon Layers

et al. 2013

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Lithium migration in nanostructured electrode materials is important for an understanding and improvement of high energy density lithium batteries. An approach to measure lithium transport through nanometer thin layers of relevant electrochemical materials is presented using amorphous silicon as a model system. A multilayer consisting of a repetition of five [(6)LiNbO3(15 nm)/Si (10 nm)/(nat)LiNbO3 (15 nm)/Si (10 nm)] units is used for analysis, where LiNbO3 is a Li tracer reservoir. It is shown that the change of the relative (6)Li/(7)Li isotope fraction in the LiNbO3 layers by lithium diffusion through the nanosized silicon layers can be monitored nondestructively by neutron reflectometry. The results can be used to calculate transport parameters.

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Deposition and physical characterization of thin films of lithium niobate on silicon substrates

Abstract: Epitaxial growth of lithium niobate thin films from a singlesource organometallic precursor using metalorganic chemical vapor deposition

Cited by 32 publications

References 9 publications

Generation of surface acoustic waves on doped semiconductor substrates

Generation of surface acoustic waves on doped semiconductor substrates

Neutron Reflectometry to Measure In Situ Li Permeation through Ultrathin Silicon Layers and Interfaces

Lithium Transport through Nanosized Amorphous Silicon Layers

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