2012
DOI: 10.1007/s10854-012-1019-8
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Deposition and photo-induced electrical resistivity of dip-coated NiO thin films from a precipitation process

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Cited by 4 publications
(4 citation statements)
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“…The absorption edge of sample 1 (Fig. 6a), corresponding to NiO film alone, occurs at about 350 nm, UV region, typical of this semiconductor material [34,44]. The inset in Fig.…”
Section: Resultsmentioning
confidence: 95%
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“…The absorption edge of sample 1 (Fig. 6a), corresponding to NiO film alone, occurs at about 350 nm, UV region, typical of this semiconductor material [34,44]. The inset in Fig.…”
Section: Resultsmentioning
confidence: 95%
“…vacancy level which is an acceptor trap (represented by Ain Fig. 8b with green color), since there is not energy enough for generation of electron-hole pairs in this material [34]. In this case, an increase in the holes density is obtained in the valence band of NiO.…”
Section: Resultsmentioning
confidence: 97%
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“…NiO nanosheets have been produced from NiCl 2 and NaOH using thermal decomposition [ 47 ], biosynthesis [ 48 , 49 ] and the microemulsion method [ 50 ]. Furthermore, precipitation [ 51 ], temperature programmed decomposition (TPD) [ 52 ], solid-state decomposition [ 53 ] and the sonochemical method [ 54 ] were also applied. NiO has been produced through the precipitation technique from NiCl 2 and urea [ 55 ].…”
Section: Introductionmentioning
confidence: 99%