Deposition and Microstructure of Vapor‐Deposited Silicon Carbide

Gulden, T. D.

doi:10.1111/j.1151-2916.1968.tb11911.x

Cited by 67 publications

(15 citation statements)

References 6 publications

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“…Its dissociation energy amounts to 380 kJ mol ±1 (low pressure regime). [34] Using an MTS/H 2 ratio of about 1:40, even deposition of free carbon was reported at temperatures above 1500 C. [8,35,36] …”

Section: Discussionmentioning

confidence: 99%

CVD of SiC from Methyltrichlorosilane. Part II: Composition of the Gas Phase and the Deposit

Zhang

Hüttinger²

2001

Chem. Vap. Deposition

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Part I of the paper was concerned with the influence of the surface area/volume ratio, [A S /V R ], temperature, and residence time on the deposition rate of silicon carbide from a 1:4 methyltrichlorosilane (MTS)/hydrogen mixture. In Part II, the composition of the gas phase and the deposit are investigated. It is shown that deposition rate maxima at about 900 C and 1025 C, frequently reported in the literature, result from a temperature-selective deposition of both SiC and Si. This selectivity is determined by the [A S /V R ] ratio because it controls the interaction of the gas phase and surface reactions. At a sufficiently high [A S /V R ] ratio, deposition of free silicon is completely suppressed and the rate maxima disappear simultaneously. Increasing the temperature generally favors deposition of stoichiometric silicon carbide. Results for the gas phase composition are used to discuss changes of gas phase chemistry responsible for the deposition of free silicon, as well as of stoichiometric silicon carbide. Higher chlorosilanes, as well as carbochlorosilanes, are postulated as intermediates of silicon and silicon carbide deposition, respectively.

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Section: Discussionmentioning

confidence: 99%

CVD of SiC from Methyltrichlorosilane. Part II: Composition of the Gas Phase and the Deposit

Zhang

Hüttinger²

2001

Chem. Vap. Deposition

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“…A fluidized bed process, one of the CVD techniques, has been developed for fuel particles to form a pure and homogeneous SiC coating [11,12]. The representative microstructure of the fluidized bed SiC material was well summarized in Ref.…”

Section: Fabrication Of Silicon Carbidementioning

confidence: 99%

Handbook of SiC properties for fuel performance modeling

Snead

Nozawa

Katoh

et al. 2007

Journal of Nuclear Materials

1,176

582

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“…SiC deposited on graphite substrates by MTS processes is polycrystalline and its m i c r o s t r u c t u r e was found to d e p e n d strongly on the deposition t e m p e r a t u r e and growth mechanism. The effect of deposition variables on deposits characteristics has been discussed in detail in other papers (2,(12)(13)(14). In general, low deposition temperatures and a surface kinetics control m e c h a n i s m p r o d u c e d stratified textures and fine grain sizes.…”

Section: Resultsmentioning

confidence: 98%

Growth Characteristics of CVD Beta‐Silicon Carbide

Cheng

Shyy

Kuo

et al. 1987

J. Electrochem. Soc.

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The films of B-SiC were prepared from the methyltrichlorosilane (MTS) by low pressure chemical vapor deposition onto the graphite substrates. The results revealed that the growth rate of ~-SiC increased with the MTS flux; besides, the growth rate increased to a maximum and then decreased with increasing deposition temperature. The preferred orientation of the films was examined by x-ray diffraction, and was found to exhibit a (220) texture in the films of high growth rate and/or long deposition time. The structural morphology was characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Observed features indicated the twin plane reentrant edge (TPRE) mechanism as responsible for the B-SiC growth. The growth features of particulate crystals (e.g., dendrites, whiskers, needles) were identified, and also could be interpreted in terms of the TPRE mechanism.Silicon carbide (SIC) is a refractory compound with much promise for certain electronic, optical, and structural applications. Its wide energy bandgap and high saturated drift velocityshould make it a useful high temperature semiconductor. By virtue of its intrinsic oxidation, corrosion and creep resistance at high temperature, as well as its high thermal conductivity, extreme hardness, low neutron absorption cross section, and excellent resistance to chemical attack and thermal shock, SiC is of considerable interest in several fields of science and technology connected with the production or transformation of energy. Additionally, SiC is an excellent infrared transmitting material because it has a cutoff in the IR beyond 5.5 ~m (1-3). The cubic form of B-SiC has a forbidden energy gap of 2.3 eV. This poly-type is also relatively easy to grow at relatively low temperatures via solution or vapor phase deposition routes.B-SiC crystals have been grown by many investigators using chemical vapor deposition (CVD) (4-6) 9 In these papers, methyltrichlorosilane (MTS) was most frequently used, because it has a 1:1 molar ratio of silicon to carbon which results in the deposition of a dense stoichiometric SiC deposit. Essentially, all the studies were concerned with the growth or characterization of SiC. Additionally, the microstructure and the growth mechanism of deposits have also been discussed by several investigators (6-8). The growth mechanism determines the nature of defects and the form of the particulate crystals (e.g., dendrite, whisker, needle), both of which are of prime importance in all applications. The particulate crystal growth, especially in the CVD process, is even more evident as the growth time increases. So, a better understanding of the growth mechanism may aid in improving the quality of crystal and obtaining a larger size crystal.In this paper, crystals of ~-SiC were chemically vapor deposited on graphite substrates by thermal decomposition of CH3SiC13 carried in a flowing hydrogen. An important objective of this study was to characterize the growth mechanism of the R-SiC by investigating the microstructure of the...

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Deposition and Microstructure of Vapor‐Deposited Silicon Carbide

Cited by 67 publications

References 6 publications

CVD of SiC from Methyltrichlorosilane. Part II: Composition of the Gas Phase and the Deposit

CVD of SiC from Methyltrichlorosilane. Part II: Composition of the Gas Phase and the Deposit

Handbook of SiC properties for fuel performance modeling

Growth Characteristics of CVD Beta‐Silicon Carbide

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