Deposition and investigation of lanthanum–cerium hexaboride thin films

Kuzanyan, A. S.; Harutyunyan, Syuzanna R.; Vardanyan, Vardan Hoviki; Badalyan, G. R.; Petrosyan, Vahagn; Kuzanyan, V. S.; Petrosyan, S. I.; Karapetyan, Vahuni; Wood, K. S.; Wu, H.-D; Gulian, Armen

doi:10.1016/j.jssc.2006.01.040

Cited by 18 publications

(4 citation statements)

References 12 publications

(15 reference statements)

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“…One promising field is the development of thermionic films, which may offer the possibility of the production of inexpensive and simple high emission planar cathodes. Various methods have been employed for the preparation of LaB 6 films such as chemical vapor deposition [2], pulsed laser deposition [3], electron-beam evaporation [4] and magnetron sputtering [5]. Among these manufacturing methods, magnetron sputtering possesses numerous advantages including high sputtering rates, low substrate temperature and easier operation of the facility, and all of these help the technology to realize industrial application easily.…”

Section: Introductionmentioning

confidence: 99%

Effect of Argon Pressure on the Structure and Resistivity of Dc Magnetron Sputtered LaB6 Films

Zhang

Zhao

et al. 2013

AMM

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A series of Si (100) based LaB6films were deposited by D.C. magnetron sputtering with different argon pressure, one of the most important deposition parameters, which affect both the structure and properties of the thin films. XRD, AFM, Raman, and Hall measuring instrument were used to characterize the film structure and performances. It was found that argon pressure strongly influenced the condensing particles’ kinetic energy obviously through affecting the scattering processes of sputtered energetic particles, which played a crucial role in the growth of the LaB6films. LaB6film deposited at 1.0 Pa showed a higher crystallinity degree. Morever, the film displayed a more uniform structure and better electrical property, the relationship between microsture, electrical property and crystallinity were demonstrted as well.

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Section: Introductionmentioning

confidence: 99%

Effect of Argon Pressure on the Structure and Resistivity of Dc Magnetron Sputtered LaB6 Films

Zhang

Zhao

et al. 2013

AMM

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“…Further, it appears that very sparse studies on growing thin films of lanthanum cerium hexaboride have been reported. Only one report is known on the growth of La x Ce 1À x B 6 films that too by via physical methods like electron beam evaporation, pulsed laser deposition and magnetron sputtering which require expensive equipment and high purity targets which require a large volume of material [14]. Spin coating is a cost-effective technique [15][16][17] that is used routinely for the deposition of thin film of oxide, sulphide and selenides.…”

Section: Introductionmentioning

confidence: 99%

“…Mostly Ce-rich phases of micron-sized lanthanum cerium hexaborides, such as La 0.449 Ce 0.551 B 5.736 , La 0.227 Ce 0.773 B 5.628 , La 0.28 Ce 0.72 B 6 , La 0.68 Ce 0.32 B 5.64 , La 0.4 Ce 0.6 B 5.58 , and La 0.5 Ce 0.5 B 5.74 , are known [10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Novel borothermal route for the synthesis of lanthanum cerium hexaborides and their field emission properties

Menaka

Patra

Ghosh

et al. 2012

Journal of Solid State Chemistry

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“…With the advent of nanotechnology, the development of planar cathodes using LaB 6 films has attracted great interests in the last few years. A large variety of methods has been employed for the preparation of LaB 6 films such as chemical vapor deposition [3,4], pulsed laser deposition [5,6], electron-beam evaporation [7] and magnetron sputtering [8][9]. Among these deposition techniques, magnetron sputtering method was widely used for depositing films with high deposition rates at relative low substrate temperatures [10,11].…”

Section: Introductionmentioning

confidence: 99%

The Influence of Argon Pressure on the Structural and Physical Properties of LaB6 Films

Zhao

Min

et al. 2011

AMM

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Lanthanum hexaboride (LaB6) films were deposited on Si (111) substrates by magnetron sputtering method. The characterization of the films was investigated by means of atom force microscopy (AFM), X-ray diffraction (XRD), four-point probe electrical resistance measurement, scratch tester and nano-indentation tester. Influence of argon pressure on physical properties, such as crystallization degree, conductivity and mechanical properties was studied. All the films were smooth and dense. The film crystallites showed a preferential orientation of (100) plane, but the films which were deposited at 2.0 Pa exhibited amorphous structures. LaB6 films which were deposited below 1.5 Pa had excellent conductivity. The bonding strength of the films which were deposited at 1.0 Pa was higher than the others due to the formation of the nano-sized crystals. The hardness and elastic modulus were investigated in connection with the crystalline of LaB6 films. As a result, the films which were deposited at 1.0 Pa had a maximal value of hardness (16.782 Gpa) and elasticity modulus (193.895 Gpa). In a word, the LaB6 films which were deposited at 1.0 Pa have a higher degree of crystalline and more excellent physical properties in comparison with the others. The obtained results will be used synthesizing LaB6 films for applications in low-temperature thermoelectric devices.

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Deposition and investigation of lanthanum–cerium hexaboride thin films

Cited by 18 publications

References 12 publications

Effect of Argon Pressure on the Structure and Resistivity of Dc Magnetron Sputtered LaB<sub>6</sub> Films

Effect of Argon Pressure on the Structure and Resistivity of Dc Magnetron Sputtered LaB<sub>6</sub> Films

Novel borothermal route for the synthesis of lanthanum cerium hexaborides and their field emission properties

The Influence of Argon Pressure on the Structural and Physical Properties of LaB<sub>6</sub> Films

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