Deposition and field emission properties of highly crystallized silicon films on aluminum-coated polyethylene napthalate

Study on the initial growth process of crystalline silicon films on aluminum-coated polyethylene napthalate by Raman spectroscopy

“…However, the crystallization quality cannot be improved to the level of the initial stage. The characteristic peak maintains at 500 cm À1 until the thickness of the films increases to 1000 nm [19]. It is worth noting that except for the first order Raman scattering of silicon films, the other peaks come from the substrate material because the silicon films are so thin in the initial growth stage.…”

“…And in reports concerning the deposition of crystalline silicon films on plastic in plasma CVD process, it is necessary to choose the suitable plastic, which cannot deform in the deposition process. To realize the low-cost manufacture and the use of ordinary plastic substrates, we have successfully prepared highly crystallized silicon films on aluminum-coated polyethylene napthalate (PEN) by inductively coupled plasma chemical vapor deposition (ICP-CVD) at room temperature by optimizing the deposition parameters [19].…”