Deposition and characterization of highly p-type antimony doped ZnTe thin films

Barati, Alireza; Klein, Andreas; Jaegermann, Wolfram

doi:10.1016/j.tsf.2008.10.078

Cited by 33 publications

(13 citation statements)

References 18 publications

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“…ZnTe also crystallizes in its ground state in the ZB structure, with a direct gap of ∼2.3 eV, and its intrinsic p-type conductivity is reportedly due to V Zn . P-type dopants N Te (25 S cm –1 ), Cu Zn (∼0.33 S cm –1 ), and Sb Zn (∼30 S cm –1 ) improve the p-type conductivity of ZnTe, and several of these dopants have been confirmed computationally with defect studies (see Figure b) . N-type doping is trickier but has been achieved in epitaxial crystals with Al Zn , Cl Te , and Sn Zn . − P-type ZnTe is commonly used in CdTe solar cells as a back contact due to its small valence band offset with CdTe of approximately <100 meV (see section ), and has been explored for photocatalysis applications …”

Section: Methodsmentioning

confidence: 88%

“…138 ZnTe also crystallizes in its ground state in the zincblende structure, with a direct gap of ~2.3 eV, 139 and its intrinsic p-type conductivity is reportedly to be due to V Zn . P-type dopants N Te (25 S cm -1 ), 140 Cu Zn (~0.33 S cm -1 ), 141 and Sb Zn (~30 S cm -1 ) 142 are used to improve the p-type conductivity of ZnTe, and several of these dopants have been confirmed computationally with defect studies (c.f. Figure 3.2b).…”

Section: Znchmentioning

confidence: 90%

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Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO) used in displays, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. g-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for ptype doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E G > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and light emitting diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

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Section: Methodsmentioning

confidence: 88%

Section: Znchmentioning

confidence: 90%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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“…Light and dark shades of gray distinguish the band-gap value. Data are obtained from refs − , and for details, see Table S1 in the Supporting Information (SI).…”

Section: Introductionmentioning

confidence: 99%

On the Dopability of Semiconductors and Governing Material Properties

et al. 2020

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To be practical, semiconductors need to be doped. Sometimes, they need to be doped to nearly degenerate levels, e.g., in applications such as thermoelectric, transparent electronics, or power electronics. However, many materials with finite band gaps are not dopable at all, while many others exhibit a strong preference toward allowing either p- or n-type doping but not both. In this work, we develop a model description of semiconductor dopability and formulate design principles in terms of governing material properties. Our approach, which builds upon the semiconductor defect theory applied to a suitably devised (tight-binding) model system, reveals analytic relationships between intrinsic material properties and the semiconductor dopability and elucidates the role and the insufficiency of previously suggested descriptors such as the absolute band edge positions. We validate our model against a number of classic binary semiconductors and discuss its extension to more complex chemistries and the utility in large-scale material searches.

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“…ZnTe can be doped p-type with Cu, [47] N, [48] or Sb [49] to achieve high hole concentrations in excess of 10 19 cm −3 . We used first-principles defect calculations to assess the p-type dopability of AlAs, AgAlTe 2 , and CuAlTe 2 , which were identified as promising canidadates based on their stability, hole mobility, and band alignment with CdTe.…”

Section: P-type Dopabilitymentioning

confidence: 99%

A Search for New Back Contacts for CdTe Solar Cells

Gorai

Krasikov

Grover

et al. 2022

Preprint

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There is widespread interest in reaching the practical efficiency of cadmium telluride (CdTe) thin-film solar cells, which suffer from significant open-circuit voltage loss due to high surface recombination velocity and Schottky barrier at the back contact. Here, we focus on back contacts in the superstrate configuration with the goal of finding new materials, that can provide improved passivation, electron reflection and hole transport properties compared to the commonly used material, ZnTe. We performed a computational search among 229 binary and ternary tetrahedrally-bonded structures using first-principles methods and transport models to evaluate critical materials design criteria, including phase stability, electronic structure, hole transport, band alignments, and p-type dopability. Through this search, we have identified several candidate materials and their alloys (AlAs, AgAlTe2, ZnGeP2, ZnSiAs2, CuAlTe2) that exhibit promising properties for back contacts. We hope these new material recommendations and associated guidelines will inspire new directions in hole transport layer design for CdTe solar cells.

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Deposition and characterization of highly p-type antimony doped ZnTe thin films

Cited by 33 publications

References 18 publications

Wide Band Gap Chalcogenide Semiconductors

Wide Band Gap Chalcogenide Semiconductors

On the Dopability of Semiconductors and Governing Material Properties

A Search for New Back Contacts for CdTe Solar Cells

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