Deposition and characterisation of sputtered molybdenum oxide thin films with hydrogen atmosphere

López-Pintó, Nicolau; Tom, Thomas; Bertomeu, J.; Asensi, J.M.; Ros, Eloi; Ortega, Pablo; Voz, C.

doi:10.1016/j.apsusc.2021.150285

Cited by 19 publications

(9 citation statements)

References 37 publications

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“…In pristine MoSe 2 , Mo 3d deconvoluted spectrum has peaks at 229, 232, and 232.5 eV due to the presence of Mo─Se, Mo 3+ and Mo 6+ , respectively. [51][52][53] In MoSe 2 /rGO heterostructure, Mo 3d deconvoluted spectrum has peaks at 228.5 and 231.5, and 232.5 eV due to the presence of Mo─Se, Mo 3+ , and Mo 6+ , respectively. [51,52] The negative shift was observed in the peaks of the MoSe 2 /rGO heterostructure due to the formation of the heterostructure, demonstrating the formation of interfacial Mo─Se bond between MoSe 2 and rGO.…”

Section: Resultsmentioning

confidence: 99%

“…[51][52][53] In MoSe 2 /rGO heterostructure, Mo 3d deconvoluted spectrum has peaks at 228.5 and 231.5, and 232.5 eV due to the presence of Mo─Se, Mo 3+ , and Mo 6+ , respectively. [51,52] The negative shift was observed in the peaks of the MoSe 2 /rGO heterostructure due to the formation of the heterostructure, demonstrating the formation of interfacial Mo─Se bond between MoSe 2 and rGO. This negative shift is attributed to the strong electronic interactions between MoSe 2 and rGO.…”

Section: Resultsmentioning

confidence: 99%

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Aggregation induced edge sites actuation of 3D MoSe₂/rGO electrocatalyst for high‐performing water splitting system

Janani,

Surendran,

Lee

et al. 2023

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Abstract2D materials are regarded as promising electrocatalysts for water splitting because of their advances in providing ample active sites and improving electrochemical reaction kinetics. 2D MoSe2 has a greater intrinsic electrical conductivity and lower Gibbs free energy for reactant adsorption. However, there is still room for improvement in the electrocatalytic performance of MoSe2 for high‐performance electrochemical water splitting devices. Herein, the in situ preparation of heterostructure made of covalently bonded MoSe2 and rGO is reported. The obtained electrocatalyst contains the aggregated 3D structured MoSe2 over rGO, which is covalently bonded together with more edge sites. The active edge sites of MoSe2/rGO are dynamically involved in the electrocatalytic activity while facilitating electron transfer. Hence, the MoSe2/rGO heterostructure requires a low cell voltage of 1.64 V to reach 100 mA cm−2 in water splitting with high reaction kinetics. The aggregated MoSe2 over rGO with more edge sites exposed by the 3D structure of MoSe2 and the interfacial covalent bond in between them provides a favorable electronic structure for the HER and OER with low overpotentials and high current densities and enhances the stability of the electrocatalyst. This work presents an attractive and cost‐effective electrocatalyst suitable for industrial‐scale hydrogen fuel production.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Aggregation induced edge sites actuation of 3D MoSe₂/rGO electrocatalyst for high‐performing water splitting system

Janani,

Surendran,

Lee

et al. 2023

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“…The chamber pressure was maintained at 10 –9 mbar. Additionally, the fitting of XPS spectra was performed using the Shirley background subtraction method …”

Section: Methodsmentioning

confidence: 99%

Oxygen Plasma Treatment of Thermally Evaporated MoO_3-x Films: An Approach to Tune the Work Function

Kumari

Bhardwaj

Rahul

et al. 2023

ACS Appl. Electron. Mater.

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The hole selectivity of molybdenum oxide (MoO3‑x ) in organic and inorganic heterojunction solar cells depends on its work function value. MoO3‑x with a higher work function value has superior selectivity and facilitates the flow of holes through it. The oxidation state of the Mo atoms and the oxygen vacancy affect the work function of MoO3‑x . Here, for the first time, thermally evaporated MoO3‑x films are subjected to oxygen (O2) plasma treatment using a plasma-enhanced chemical vapor deposition method to tune the work function. The effect of O2 plasma treatment on work function is studied using Kelvin probe force microscopy. The work function of thick MoO3‑x films increased from 4.91 ± 0.01 eV for as-deposited films to 5.22 ± 0.02 eV by proper tuning of rf power, oxygen flow rate, and O2 plasma treatment time. This increase in work function is accompanied with the increase in O/Mo ratio in these films as confirmed by EDX. Oxygen plasma treatment has also resulted in the enhancement of work function, transmittance, and band gap of thin (23 and 14 nm) MoO3‑x films. An optimum increase in work function for thin films by ∼0.40 eV is observed for 5 min plasma treatment at 80 W rf power with a 30 SCCM oxygen flow rate. The studies suggest oxygen plasma treatment as an effective approach to recover or tune the work function of molybdenum oxide films.

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“…This advantage could be also used in other type of devices that could take advantage of such physicochemical surface properties. Moreover, most of these contacts can be deposited using simple techniques such as thermal evaporation, sputtering, atomic layer deposition (ALD) or spin coating [15][16] [17] . Hence, flammable and toxic boron/phosphorous gas precursors used for doping in techniques such as Thermal Diffusion or Plasma-Enhanced Chemical Vapour Deposition (PECVD) can be avoided [18][19] .…”

Section: Introductionmentioning

confidence: 99%

Deoxyribonucleic Acid‐Based Electron Selective Contact for Crystalline Silicon Solar Cells

Tom

Ros

Rovira

et al. 2022

Adv Materials Technologies

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Development of carrier selective contacts for crystalline silicon solar cells has been recently of great interest towards the further expansion of silicon photovoltaics. The use of new electron and hole selective layers has opened an array of possibilities due to the low-cost processing and non-doping contacts. Here, a non-doped heterojunction silicon solar cell without the use of any intrinsic amorphous silicon is fabricated using Deoxyribonucleic acid (DNA) as the electron transport layer (ETL) and transition metal oxide V2O5 as the hole transport layer. The deposition and characterization of the DNA films on crystalline silicon have been studied, the films have shown a n-type behaviour with a work function of 3.42 eV and a contact resistance of 28 mΩ cm 2 . This non-doped architecture has demonstrated a power conversion efficiency of 15.6%, which supposes an increase of more than 9% with respect to the cell not containing the biomolecule, thus paving the way for a future role of nucleic acids as ETLs.

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Deposition and characterisation of sputtered molybdenum oxide thin films with hydrogen atmosphere

Cited by 19 publications

References 37 publications

Aggregation induced edge sites actuation of 3D MoSe₂/rGO electrocatalyst for high‐performing water splitting system

Aggregation induced edge sites actuation of 3D MoSe₂/rGO electrocatalyst for high‐performing water splitting system

Oxygen Plasma Treatment of Thermally Evaporated MoO_3-x Films: An Approach to Tune the Work Function

Deoxyribonucleic Acid‐Based Electron Selective Contact for Crystalline Silicon Solar Cells

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Deposition and characterisation of sputtered molybdenum oxide thin films with hydrogen atmosphere

Cited by 19 publications

References 37 publications

Aggregation induced edge sites actuation of 3D MoSe2/rGO electrocatalyst for high‐performing water splitting system

Aggregation induced edge sites actuation of 3D MoSe2/rGO electrocatalyst for high‐performing water splitting system

Oxygen Plasma Treatment of Thermally Evaporated MoO3-x Films: An Approach to Tune the Work Function

Deoxyribonucleic Acid‐Based Electron Selective Contact for Crystalline Silicon Solar Cells

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Product

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Aggregation induced edge sites actuation of 3D MoSe₂/rGO electrocatalyst for high‐performing water splitting system

Aggregation induced edge sites actuation of 3D MoSe₂/rGO electrocatalyst for high‐performing water splitting system

Oxygen Plasma Treatment of Thermally Evaporated MoO_3-x Films: An Approach to Tune the Work Function