Deposited well-crystallized cubic boron nitride films by pulsed plasma enhanced chemical vapor deposition at room temperature

Abstract

Articles you may be interested inResidual compressive stress induced infrared-absorption frequency shift of hexagonal boron nitride in cubic boron nitride films prepared by plasma-enhanced chemical vapor deposition J. Appl. Phys. 112, 053502 (2012); 10.1063/1.4749805 Thick and adherent cubic boron nitride films grown on diamond interlayers by fluorine-assisted chemical vapor deposition Appl. Phys. Lett. 85, 1344 (2004); 10.1063/1.1784545 High-quality, faceted cubic boron nitride films grown by chemical vapor deposition Appl. Phys. Lett. 79, 4530 (2001); 10.1063/1.1428762 Plasma enhanced metalorganic chemical vapor deposition of amorphous aluminum nitrideThe crystallized cubic boron nitride (c-BN) films have been grown on silicon ͑100͒ wafer substrate successfully at room temperature by using a pulsed plasma enhanced chemical vapor deposition technique. Infrared absorption spectra and x-ray diffraction indicate that deposited boron nitride films mainly consist of c-BN phase. The scanning electron microscopy images exhibit regular grain shapes. The mean grain size is about 500 nm. The ratio of c-BN phase to h-BN phase in the deposited thin films mainly depends on the discharging voltages that producing the pulsed plasma.