2007
DOI: 10.1111/j.1551-2916.2007.01586.x
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Depletion of Grain‐Boundary Phase and Elastic Creep Deformation Upon Ultra‐Long Flexural Stress Rupture Experiments of NC‐132 Silicon Nitride

Abstract: A unique grain‐boundary structure evolution was observed in two MgO‐doped silicon nitride specimens (Norton, NC‐132) that were tested in ultra‐long flexure stress rupture experiments with an applied stress of 266 MPa and fractured at 14 941 and 17 376 h. Transmission electron microscopy showed that, although the starting material had a secondary glass phase both at multi‐grain junctions and along grain boundaries, the tested specimens contained no residual glass phase. Concurrent with the elimination of the se… Show more

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Cited by 4 publications
(4 citation statements)
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“…Figure shows that the material is mainly constituted of β‐Si 3 N 4 , while WC, Fe 3 N 1.3 , and Fe 7 C 3 are present as minor phases. This is in good agreement with the previously published data regarding characterization of this material . The contact between the test bars and the metal was enhanced by wet hand‐grinding surface of the bar using progressive SiC papers of 120, 320, 600, and 1200 grit, followed by hand‐polishing using colloidal Al 2 O 3 suspensions.…”
Section: Methodssupporting
confidence: 91%
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“…Figure shows that the material is mainly constituted of β‐Si 3 N 4 , while WC, Fe 3 N 1.3 , and Fe 7 C 3 are present as minor phases. This is in good agreement with the previously published data regarding characterization of this material . The contact between the test bars and the metal was enhanced by wet hand‐grinding surface of the bar using progressive SiC papers of 120, 320, 600, and 1200 grit, followed by hand‐polishing using colloidal Al 2 O 3 suspensions.…”
Section: Methodssupporting
confidence: 91%
“…Since the Al channels are very narrow (~80 nm thickness) and the specific volumes of the reactant (true density of β‐Si 3 N 4 = 3180 kg/m 3 ,) and product (true density of AlN = 3250 kg/m 3 ,) are close, then Si precipitation in the channels can occur and subsequently cause the blockage, although this was not observed experimentally in the present study. However, if it occurs, the diffusion of Al and N through single‐crystal Si must be considered.…”
Section: Discussionmentioning
confidence: 50%
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“…This result is consistent with the observation that the interfaces in the Al 2 O 3 ‐doped B 6 O are at least partially wetted, which can also be seen as a snapshot of a cation outward diffusion process. The proposed outward diffusion of cations during cooling results in (i) clean interfaces (possibly with segregants present along the boundary) and (ii) is expected to eventually lead to the formation of microcracks, as reported for a MgO‐doped Si 3 N 4 system on long‐term annealing 35 …”
Section: Discussionmentioning
confidence: 61%