Depleted Monolithic Active Pixel Sensors in the LFoundry 150 nm and TowerJazz 180 nm CMOS Technologies

Wang, Tianyang; Barbero, M.; Barrillon, P.; Berdalovic, I.; Bespin, C.; Bhat, S.; Breugnon, P.; Caicedo, I.; Cardella, R.; Chen, Zongde; Değerli, Y.; Dingfelder, J.; Acedo, Leyre Flores Sanz de; Godiot, S.; Guilloux, F.; Hemperek, T.; Hirono, T.; Huegging, F.; Krüger, H.; Kugathasan, T.; Moustakas, Konstantinos; Ouraou, A.; Pangaud, P.; Pernegger, H.; Piro, F.; Pohl, D.; Riedler, P.; Rymaszewski, P.; Schwemling, Philippe; Snoeys, W.; Vandenbroucke, M.; Wermes, N.; Zhang, Sinuo

doi:10.22323/1.373.0026

Cited by 2 publications

(2 citation statements)

References 19 publications

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“…RD50-MPW4 requires a breakdown voltage greater than 300 V to enable a full depletion of the sensor substrate. This can be achieved by using the front-side (or edge) biasing method, which has proven performances on various depleted monolithic CMOS detector prototypes [10,11]. In order to realise such a biasing method in RD50-MPW4, a new chip ring structure is required to be implemented.…”

Section: Jinst 19 C04059mentioning

confidence: 99%

RD50-MPW: a series of monolithic High Voltage CMOS pixel chips with high granularity and towards high radiation tolerance

Zhang,

Pilsl,

Powell

et al. 2024

J. Inst.

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A series of monolithic High Voltage CMOS (HV-CMOS) pixel sensor prototypes have been developed by the CERN-RD50 CMOS working group for potential use in future high luminosity experiments. The aim is to further improve the performance of HV-CMOS sensors, especially in terms of pixel granularity, timing resolution and radiation tolerance. The evaluation of one of this series, RD50-MPW3, is presented in this contribution, including laboratory and test beam measurements. The design of the latest prototype, RD50-MPW4, which resolves issues found in RD50-MPW3 and implements further improvements, is described.

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Section: Jinst 19 C04059mentioning

confidence: 99%

RD50-MPW: a series of monolithic High Voltage CMOS pixel chips with high granularity and towards high radiation tolerance

Zhang,

Pilsl,

Powell

et al. 2024

J. Inst.

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show abstract

“…The Monopix chips [8,9] are large-scale DMAPS with fast columndrain read-out architectures. They were designed to meet the requirements of the outer layers of the ATLAS Inner Tracker (''ITk'') at the The devices are preferably thinned-down in order to minimize multiple scattering, material budget and leakage current.…”

Section: Introductionmentioning

confidence: 99%

Development and testing of a radiation-hard large-electrode DMAPS design in a 150 nm CMOS process

Caicedo

Barbero

Barrillon

et al. 2022

Nuclear Instruments and Methods in Physics Research Section A:

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Depleted Monolithic Active Pixel Sensors in the LFoundry 150 nm and TowerJazz 180 nm CMOS Technologies

Cited by 2 publications

References 19 publications

RD50-MPW: a series of monolithic High Voltage CMOS pixel chips with high granularity and towards high radiation tolerance

RD50-MPW: a series of monolithic High Voltage CMOS pixel chips with high granularity and towards high radiation tolerance

Development and testing of a radiation-hard large-electrode DMAPS design in a 150 nm CMOS process

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