Depleted-heterojunction colloidal quantum dot photovoltaics employing low-cost electrical contacts

Debnath, Ratan; Greiner, Mark; Kramer, Illan J.; Fischer, A.; Tang, Jiang; Barkhouse, D. Aaron R.; Wang, Xihua; Levina, Larissa; Lu, Zheng‐Hong; Sargent, Edward H.

doi:10.1063/1.3463037

Cited by 41 publications

(23 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This can generally be seen via chemical analysis of the interface using XPS. 20 If the dielectric film is thermodynamically favored but deposited by chemical means such as chemical vapor deposition (CVD), then reaction kinetics can play a major role in interface formation. This can lead to compositions that are 16 This has also been observed for HfO 2 deposited onto Si by means of CVD.…”

Section: Resultsmentioning

confidence: 99%

Effects of interfacial oxide layers of the electrode metals on the electrical characteristics of organic thin-film transistors with HfO2 gate dielectric

Tang

Greiner

Helander

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inAtomic layer deposition grown metal-insulator-metal capacitors with RuO 2 electrodes and Al-doped rutile TiO 2 dielectric layer J. Vac. Sci. Technol. B 29, 01AC09 (2011); 10.1116/1.3534023 Electrode effects on the conduction mechanisms in HfO 2 -based metal-insulator-metal capacitors Characteristics of metal-insulator-semiconductor capacitors based on high-k HfAlO dielectric films obtained by low-temperature electron-beam gun evaporation Appl. Phys. Lett. 85, 5950 (2004); 10.1063/1.1836875Metal-insulator-metal capacitors using Y 2 O 3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition HfO 2 -based devices employing various electrode metals (Al, W, Pt, Cu, and Cr) were fabricated and characterized in order to examine the importance of the choice of metal electrode when sputter-depositing HfO 2 films. It was found that metal-insulator-metal capacitors with an Al bottom electrode exhibit a significantly smaller leakage current and a larger breakdown field strength than devices using W, Pt, Cu, and Cr electrodes. By examining HfO 2 /metal interfaces with x-ray photoelectron spectroscopy, it was found that metal electrodes are oxidized during the deposition of HfO 2 , resulting in interfacial oxide layers of the electrode metals (Al 2 O 3 , WO 3 , PtO, CuO, and Cr 2 O 3 þ CrO 3 ) between the metal electrode and the HfO 2 layer. The formation of a metal oxide interlayer is a consequence of the high-energy oxygen ions generated during HfO 2 sputtering. The difference in the device performance was attributed to the electronic properties of the oxide interlayers. It was found that when the oxide interlayers are semiconducting (e.g., WO 3 , PtO, CuO, or Cr 2 O 3 þ CrO 3 ), devices have high leakage currents and low breakdown field strengths, and an insulating oxide interlayer (Al 2 O 3 ) enhances these device characteristics. Organic thin-film transistors (OTFTs) using a HfO 2 dielectric layer showed that an Al gate has a much lower offstate current, larger on/off ratio, and smaller sub-threshold slope compared with OTFTs using a Cr electrode. These results demonstrate the importance of the metal gate electrode and the electrical characteristics of its oxide when using the sputter-deposition of HfO 2 to fabricate thin-film transistors.

show abstract

Section: Resultsmentioning

confidence: 99%

Effects of interfacial oxide layers of the electrode metals on the electrical characteristics of organic thin-film transistors with HfO2 gate dielectric

Tang

Greiner

Helander

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…[3,10,11,13,24] Both effects make these materials suitable for the harvesting of solar light and its transformation into chemical/electrical energy, and hence for implementation in photocatalysis, photovoltaics, optoelectronics, biological labeling, and other areas. [13,14,[25][26][27] The noble metals Au and Ag coupled with TiO 2 , ZnO, CdSe, CdS, and PbS have been widely used for such applications. [13,[26][27][28][29][30][31] Literature study revealed that these materials broadly follow two types of carrier-transformation pathways on visible-light irradiation.…”

mentioning

confidence: 99%

“…[13,14,[25][26][27] The noble metals Au and Ag coupled with TiO 2 , ZnO, CdSe, CdS, and PbS have been widely used for such applications. [13,[26][27][28][29][30][31] Literature study revealed that these materials broadly follow two types of carrier-transformation pathways on visible-light irradiation. In one case, the hot electron generated from the surface plasmon of the noble metal is transferred to the semiconductor, and in the other case, the photogenerated electron moves from the semiconductor to metal.…”

mentioning

confidence: 99%

Photocatalytic Au–Bi₂S₃ Heteronanostructures

Manna¹,

Bose²,

Pradhan³

2014

Angew Chem Int Ed

151

View full text Add to dashboard Cite

Au-Bi2S3 heteronanostructure photocatalysts were designed in which the coupling of a metal plasmon and a semiconductor exciton aids the absorption of solar light, enhances charge separation, and results in improved catalytic activity. Furthermore, these nanostructures show a unique pattern of structural combination, with Au nanoparticles positioned at the center of Bi2S3 nanorods. The chemistry of formation of these nanostructures, their epitaxy at the junction, and their photoconductance were studied, as well as their photoresponse properties.

show abstract

“…10, 11, 13, 24 Both effects make these materials suitable for the harvesting of solar light and its transformation into chemical/electrical energy, and hence for implementation in photocatalysis, photovoltaics, optoelectronics, biological labeling, and other areas 13. 14, 25–27 The noble metals Au and Ag coupled with TiO 2 , ZnO, CdSe, CdS, and PbS have been widely used for such applications 13. 26–31 Literature study revealed that these materials broadly follow two types of carrier‐transformation pathways on visible‐light irradiation.…”

mentioning

confidence: 99%

Photocatalytic Au–Bi₂S₃ Heteronanostructures

2014

View full text Add to dashboard Cite

Au–Bi2S3 heteronanostructure photocatalysts were designed in which the coupling of a metal plasmon and a semiconductor exciton aids the absorption of solar light, enhances charge separation, and results in improved catalytic activity. Furthermore, these nanostructures show a unique pattern of structural combination, with Au nanoparticles positioned at the center of Bi2S3 nanorods. The chemistry of formation of these nanostructures, their epitaxy at the junction, and their photoconductance were studied, as well as their photoresponse properties.

show abstract

Depleted-heterojunction colloidal quantum dot photovoltaics employing low-cost electrical contacts

Cited by 41 publications

References 12 publications

Effects of interfacial oxide layers of the electrode metals on the electrical characteristics of organic thin-film transistors with HfO2 gate dielectric

Effects of interfacial oxide layers of the electrode metals on the electrical characteristics of organic thin-film transistors with HfO2 gate dielectric

Photocatalytic Au–Bi₂S₃ Heteronanostructures

Photocatalytic Au–Bi₂S₃ Heteronanostructures

Contact Info

Product

Resources

About

Depleted-heterojunction colloidal quantum dot photovoltaics employing low-cost electrical contacts

Cited by 41 publications

References 12 publications

Effects of interfacial oxide layers of the electrode metals on the electrical characteristics of organic thin-film transistors with HfO2 gate dielectric

Effects of interfacial oxide layers of the electrode metals on the electrical characteristics of organic thin-film transistors with HfO2 gate dielectric

Photocatalytic Au–Bi2S3 Heteronanostructures

Photocatalytic Au–Bi2S3 Heteronanostructures

Contact Info

Product

Resources

About

Photocatalytic Au–Bi₂S₃ Heteronanostructures

Photocatalytic Au–Bi₂S₃ Heteronanostructures