Abstract:As a third-generation semiconductor, silicon carbide power devices are expected to be superior to those made of silicon because of their high voltage resistance, low loss, and high efficiency. So understanding the technology for polishing wafers of silicon carbide is important, which includes studying the structure of the liquid on the surface of silicon carbide. Using molecular dynamics based on Lennard-Jones field, the structure of a water film contained within two silicon carbide (〈001〉 and 〈110〉) walls was… Show more
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