Dependence of WAL effect and enhancement of spin-orbit coupling effect in Bi1.2Sb0.8Te0.4Se2.6 low-temperature magnetic transport

Zheng, Yueqian; Xu, Tao; Wang, Xuan; Han, Bai; Zhi, Sun

doi:10.1016/j.apsusc.2023.158052

Cited by 2 publications

(3 citation statements)

References 12 publications

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“…Therefore, the transport information measured represented the sum of the contributions from both the bulk and the surface. Particularly in thinner TI films where the bulk-surface coupling phenomenon was more salient, the test results primarily reflected the contribution of bulk transport, which was more pronounced as temperature increased …”

Section: Discussionmentioning

confidence: 95%

“…Particularly in thinner TI films where the bulk-surface coupling phenomenon was more salient, the test results primarily reflected the contribution of bulk transport, which was more pronounced as temperature increased. 19 Current−Voltage (IV) Curve Tests. As illustrated in Figure 3b, we presented the current−voltage (I−V) curves for the four samples at room temperature, which showcased a gradually decreasing trend in their slopes.…”

Section: ■ Introductionmentioning

confidence: 99%

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Bulk-Surface Transport Separation and Topological Surface States Modulation of TI–TI Heterostructures

Zheng,

Xu,

Wang

et al. 2024

Crystal Growth & Design

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In this study, we prepare topological insulator (TI) heterostructures (TI−TI) with a thickness of 25 nm and various interlayer distances, utilizing the laser molecular beam epitaxy (LMBE) system. Our characterization analysis revealed high-quality morphological features and distinct heterolayered structures. Moreover, we successfully isolated bulk-surface transport properties by employing the comprehensive physical property measurement system (PPMS) and terahertz time-domain spectroscopy (THz-TDS). Compared to the monolayer binary structures, the TI−TI heterostructures demonstrated enhancement of the bulk insulation and improvement of surface conductivity. Notably, various interlayer spacings played a pivotal role in modulating both the bulk-surface transport and topological surface states. TIs have emerged as an ideal medium for information transmission in quantum chips, terahertz optical devices, and low-energy spintronic devices. This research not only provides deeper theoretical insights but also holds significant implications for practical applications.

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Section: Discussionmentioning

confidence: 95%

Section: ■ Introductionmentioning

confidence: 99%

Bulk-Surface Transport Separation and Topological Surface States Modulation of TI–TI Heterostructures

Zheng,

Xu,

Wang

et al. 2024

Crystal Growth & Design

Self Cite

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“…In topological insulators (TIs), the coupling effect between bulk and surface states, particularly pronounced in thinner TI films, often obscures the surface state information, to some extent, by the bulk state features. In PPMS testing, due to the use of contact electrodes, this measurement method inevitably leads to current passing through both the interior and surface of the sample [ 20 ]. Consequently, the obtained electronic transport information represented a combined result of contributions from both bulk and surface, as depicted in Figure 3 a, which illustrates the dual-channel, bulk-surface transport principle in TI materials and the principle of PPMS measurement [ 21 ].…”

Section: Discussionmentioning

confidence: 99%

Study on Bulk-Surface Transport Separation and Dielectric Polarization of Topological Insulator Bi1.2Sb0.8Te0.4Se2.6

Zheng,

Xu,

Wang

et al. 2024

Molecules

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This study successfully fabricated the quaternary topological insulator thin films of Bi1.2Sb0.8Te0.4Se2.6 (BSTS) with a thickness of 25 nm, improving the intrinsic defects in binary topological materials through doping methods and achieving the separation of transport characteristics between the bulk and surface of topological insulator materials by utilizing a comprehensive Physical Properties Measurement System (PPMS) and Terahertz Time-Domain Spectroscopy (THz-TDS) to extract electronic transport information for both bulk and surface states. Additionally, the dielectric polarization behavior of BSTS in the low-frequency (10–107 Hz) and high-frequency (0.5–2.0 THz) ranges was investigated. These research findings provide crucial experimental groundwork and theoretical guidance for the development of novel low-energy electronic devices, spintronic devices, and quantum computing technology based on topological insulators.

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Dependence of WAL effect and enhancement of spin-orbit coupling effect in Bi1.2Sb0.8Te0.4Se2.6 low-temperature magnetic transport

Cited by 2 publications

References 12 publications

Bulk-Surface Transport Separation and Topological Surface States Modulation of TI–TI Heterostructures

Bulk-Surface Transport Separation and Topological Surface States Modulation of TI–TI Heterostructures

Study on Bulk-Surface Transport Separation and Dielectric Polarization of Topological Insulator Bi1.2Sb0.8Te0.4Se2.6

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