2012
DOI: 10.1103/physrevb.85.195125
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Dependence of topological Anderson insulator on the type of disorder

Abstract: This paper details the investigation of the influence of different disorders in two-dimensional topological insulator systems. Unlike the phase transitions to topological Anderson insulator induced by normal Anderson disorder, a different physical picture arises when bond disorder is considered. Using Born approximation theory, an explanation is given as to why bond disorder plays a different role in phase transition than does Anderson disorder. By comparing phase diagrams, conductance, conductance fluctuation… Show more

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Cited by 86 publications
(70 citation statements)
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References 45 publications
(62 reference statements)
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“…3, while disorder closes the gap and destroys the Chern insulator in the system with inversion symmetry (panel b), the QAHE with ∆ AB = 0 is insensitive to increasing Anderson disorder (panel c). As illustrated in panel (c), large disorder can localize carriers and extend the topological phase to energies in the vicinity of the bulk gap, similarly to what is observed in topological Anderson insulators [39,40]. For illustration purposes, the values of ∆ T and ∆ AB used in panel (c) are large in comparison with values in (b).…”
mentioning
confidence: 67%
“…3, while disorder closes the gap and destroys the Chern insulator in the system with inversion symmetry (panel b), the QAHE with ∆ AB = 0 is insensitive to increasing Anderson disorder (panel c). As illustrated in panel (c), large disorder can localize carriers and extend the topological phase to energies in the vicinity of the bulk gap, similarly to what is observed in topological Anderson insulators [39,40]. For illustration purposes, the values of ∆ T and ∆ AB used in panel (c) are large in comparison with values in (b).…”
mentioning
confidence: 67%
“…1a). The existence of such delocalized quantum states can be demonstrated 44 with mathematical rigor using the theory of non-commutative Chern number, 64 while numerically, it has been demonstrated using recursive Green's function and transfer matrix calculations, 51,74,99,100 level statistics analysis, 44,67,101 simulations of the edge currents and computations of the edge conductance. [102][103][104] Near the transitions, the field-theoretic arguments developed by Pruisken and collaborators [105][106][107][108] for IQHE predict the T-driven flowdiagram shown in Fig.…”
Section: Quantum Criticality In the Spin-up Sector Of The Kane-mmentioning
confidence: 99%
“…Using the self-consistent Born approximation (SCBA), we first show that disorder can drive topological Lifshitz transition from a gapless (single-node SN) or gapped semi-Dirac phase to a semi metallic semi-Dirac phase with two nodes (TN) of Dirac type. This is a consequence of the electronic self-energy containing a finite off-diagonal part, a feature absent in typical topological insulators 18 or isotropic Dirac 25,26 systems. Furthermore, we show that breaking time-reversal symmetry in a SD system results in three distinct topological regimes: single-node trivial, two-node trivial, and two-node Chern.…”
Section: Introductionmentioning
confidence: 99%