Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2

Kim, Wan Gee; Sung, Min Gyu; Kim, Sook Joo; Yoo, Jun-Hyun; Youn, Te One; Oh, Jang Won; Kim, Jung Nam; Gyun, Byung Gu; Kim, Taeh Wan; Kim, Chi Ho; Byun, Jae-Yong; Kim, Won; Joo, Moon Sig; Roh, Jae–Sung; Park, Sung Ki

doi:10.1149/1.3552701

Cited by 11 publications

(4 citation statements)

References 18 publications

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“…The crystallization during the solar water splitting reaction at the room temperature condition is an intriguing phenomenon, as it is known to crystallize a-HfO x in the monoclinic phase at temperature of 500 °C 54 . This can be attributed to an electroforming phenomenon wherein the transition metal oxide can be reformed under the electrical field 55 . This has been observed in transition-metal-oxide-based solid-state electronic devices.…”

Section: Resultsmentioning

confidence: 99%

Seebeck-voltage-triggered self-biased photoelectrochemical water splitting using HfOx/SiOx bi-layer protected Si photocathodes

Jung

Kim

et al. 2019

Sci Rep

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The use of a photoelectrochemical device is an efficient method of converting solar energy into hydrogen fuel via water splitting reactions. One of the best photoelectrode materials is Si, which absorbs a broad wavelength range of incident light and produces a high photocurrent level (~44 mA·cm −2 ). However, the maximum photovoltage that can be generated in single-junction Si devices (~0.75 V) is much lower than the voltage required for a water splitting reaction (>1.6 V). In addition, the Si surface is electrochemically oxidized or reduced when it comes into direct contact with the aqueous electrolyte. Here, we propose the hybridization of the photoelectrochemical device with a thermoelectric device, where the Seebeck voltage generated by the thermal energy triggers the self-biased water splitting reaction without compromising the photocurrent level at 42 mA cm −2 . In this hybrid device p-Si, where the surface is protected by HfO x /SiO x bilayers, is used as a photocathode. The HfO x exhibits high corrosion resistance and protection ability, thereby ensuring stability. On applying the Seebeck voltage, the tunneling barrier of HfO x is placed at a negligible energy level in the electron transfer from Si to the electrolyte, showing charge transfer kinetics independent of the HfO x thickness. These findings serve as a proof-of-concept of the stable and high-efficiency production of hydrogen fuel by the photoelectrochemical-thermoelectric hybrid devices.

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Section: Resultsmentioning

confidence: 99%

Seebeck-voltage-triggered self-biased photoelectrochemical water splitting using HfOx/SiOx bi-layer protected Si photocathodes

Jung

Kim

et al. 2019

Sci Rep

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“…To date, it lacks a detailed study to reveal the degradation mechanism of the Si MIS photoanode. It is well-known that transition metal oxides (insulator layer) can change behavior under a high electrical field through electroforming, which has been observed on a transition metal oxide memristor. − …”

Section: Introductionmentioning

confidence: 99%

Insulator Layer Engineering toward Stable Si Photoanode for Efficient Water Oxidation

et al. 2018

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The ultrathin insulator layer in the silicon metal–insulator–semiconductor (MIS) photoanode plays important roles in determining the performance of water oxidation. We report that an insulator oxide electroforming phenomenon that occurred during long-term oxygen evolution reaction testing under constant external voltage is the primary reason for the degradation of the silicon MIS photoanode. Compared with TiO2, ZrO2 exhibits high electro-reduce resistance, which minimizes the cation transport in the dielectric film, thereby significantly enhancing the stability of silicon MIS photoanodes. Silicon passivated with an ultrathin ZrO2 film deposited by atomic layer deposition (ALD) exhibits high stability (>100 h) under alkaline conditions (PH = 14). Combined with a NiFe catalyst, the NiFe/ZrO2/n-Si photoanode exhibits improved OER activity with a low onset potential (∼0.96 V versus RHE), a high photocurrent density (26.6 mA·cm–2) at 1.23 V versus RHE, and a record high saturated current density of 36.4 mA·cm–2.

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“…high switching speed, large on/off resistance ratio, low operating voltage, and low reset current). [12][13][14][15] However, most of the resistive switching characteristics and their mechanisms for HfO 2 -based ReRAM, including other TMOs, have been explained on the basis of electrical switching performance data. [13][14][15] In this letter, by using HfO 2 as a resistive material and a metal nitride as an electrode, direct physical evidence is provided demonstrating how different switching behaviors depend on the local crystallinity of the TMO.…”

mentioning

confidence: 99%

“…Thus, when conductive filaments are created during the forming process, the capacitive charges stored in the crystallized HfO 2 layer are added to the resistive charges passing through the filaments, resulting in the first high reset current. 12,17 Furthermore, it is thought that for the TiAlN BEC, the R off /R on ratio increases by the resistance increment at the HRS due to higher work function of TiAlN versus TiN. Figure 4 shows the reliability characteristics obtained using TiAlN as a BEC material.…”

mentioning

confidence: 99%

Effect of HfO2 Crystallinity on Device Characteristics and Reliability for Resistance Random Access Memory

Kim¹,

Yoo²,

Youn³

et al. 2011

Electrochem. Solid-State Lett.

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Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2

Cited by 11 publications

References 18 publications

Seebeck-voltage-triggered self-biased photoelectrochemical water splitting using HfOx/SiOx bi-layer protected Si photocathodes

Seebeck-voltage-triggered self-biased photoelectrochemical water splitting using HfOx/SiOx bi-layer protected Si photocathodes

Insulator Layer Engineering toward Stable Si Photoanode for Efficient Water Oxidation

Effect of HfO2 Crystallinity on Device Characteristics and Reliability for Resistance Random Access Memory

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