Dependence of the Exciton-Light Coupling on the Quantum Well Width in an External Uniform Electric Field

Energy of electron-hole relative motion in exciton in external electric field in thick GaAs plate

“…An electron and a hole in a real crystal have a finite mean free path length l m f p due to the presence of scattering centers and scattering by phonons. As discussed in [50], the value of l m f p can be less than L for a thick semiconductor layer. An irreversible breakdown of the excitonic state will occur as a result of electron and hole scattering outside the Coulombic well, see, e.g., [57,58].…”

“…Then a sufficiently large value of η max , for which f ν (η max ) ≈ 0, can be chosen for this decaying part of the wave function. If thickness L of the semiconductor layer, where an exciton is located, exceeds the value η max , then this layer can be considered infinite for this decaying part of the wave function [50]. An analysis shows that the following can be chosen for GaAs…”

“…At the same time, the function g ν (ζ ) at a sufficiently large value of F has a long oscillating " tail", the amplitude of which remains finite at any finite value of ζ , see papers [46,50]. This means that the oscillating part of wave function (13) in a perfect semiconductor plane layer must become zero only on the layer boundary.…”

“…The layers where only the main excitonic resonance is seen will be hereinafter called semiconductor plates. As far as the authors of the present paper know, the first attempt at a theoretical description of the influence of an electric field on the states of electron and hole relative motion in a semiconductor plate was made in paper [50]. It was devoted to studying the influence of thickness of a gallium arsenide layer, containing an exciton, on the dependence of light-excitonic interaction on the applied electric field.…”