Dependence of the direct energy gap of GaAs on hydrostatic pressure

Single-step preparation and characterization of Cu2ZnSn(SxSe1−x)4 thin films deposited by pulsed laser deposition method

“…It is due to the existence of internal compressive stress in CZTSSe thin films. The internal compressive stress makes lattice shrink and thus the shrinkage of lattice will enlarge the band gaps of CZTSSe films [17,18]. Actually, internal compressive stress has been confirmed by XRD pattern and Raman spectra of CZTSSe thin films.…”

Temperature and hydrostatic pressure dependence of the electronic structure of AlxGa1−xAs alloys

“…Several methods have been developed to calculate the band structure of semiconductors, among them is the so called empirical pseudo-potential method (EPM) [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34]. In the EPM method, the core electrons are tightly bound to their nuclei and the valence electrons are influenced only by a weak net effective potential called pseudopotential i.e., the large attractive core potential energy of the ion core is cancelled by the large positive kinetic energy of the electron due to its rapid oscillations [18][19][20][21][22][23].…”

Photoreflectance Measurements of InGaAs/GaAs Quantum Wells

“…Taking into account the GaSb/GaAs lattice mismatch (7.8%) and GaAs pressure band gap shift (12.6 x 10 -6 eV/bar) [3] we can estimate that the band gap shift induced by the strain could be at most 1 meV. From the PVS spectra we can estimate the energy shift due to the finite barrier width.…”