Dependence of the AlSb buffers on GaSb/GaAs(001) heterostructures

Kim, H. S.; Noh, Young-Kyun; Kim, Moon‐Deock; Kwon, Y. J.; Oh, Jae‐Eung; Kim, Y. H.; Lee, Jun Young; Kim, S. G.; Chung, Kwansoo

doi:10.1016/j.jcrysgro.2006.11.223

Cited by 33 publications

(28 citation statements)

References 12 publications

(14 reference statements)

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“…Inversely, the sample 3-3 is worse than the sample 3-4 which was directly deposited on GaAs substrate. Although thin AlSb nucleation can effectively enhance the crystal quality in GaSb/ GaAs system [10], in this case, due to large lattice mismatches, thin AlSb layer has no effects on InAs x Sb 1Àx…”

Section: Xrd Analysismentioning

confidence: 99%

The growth parameter influence on the crystal quality of InAsSb grown on GaAs by molecular beam epitaxy

Gao

Wang

Jiang

et al. 2007

Journal of Crystal Growth

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Section: Xrd Analysismentioning

confidence: 99%

The growth parameter influence on the crystal quality of InAsSb grown on GaAs by molecular beam epitaxy

Gao

Wang

Jiang

et al. 2007

Journal of Crystal Growth

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“…55 and 56) or GaAs(001). 57 The shorter diffusion length of Al atoms compared to Ga seems to help in confining a larger number of relaxation-related defects at the heterointerface. To investigate the surface reconstructions of the AlSb(111) A and B surfaces, we have grown AlSb layers on GaSb(111) by MBE.…”

Section: B Alsb(111) a And Bmentioning

confidence: 99%

Analysis of GaSb and AlSb reconstructions on GaSb(111)A- andB-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction

et al. 2011

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The symmetry and existence ranges of GaSb and AlSb (111) A and B surface reconstructions are investigated using azimuthal-scan reflection high-energy electron diffraction (ARHEED) in a molecular-beam-epitaxy (MBE) environment. ARHEED patterns of all reconstructions within the accessible MBE group V flux-substrate temperature parameter field are presented and analyzed. The transition borders are mapped out as a reference for future growth experiments. The experimental results are interpreted on the basis of general construction principles for (111) surfaces of III-V semiconductors. ARHEED allows the complete determination of the two-dimensional in-plane reciprocal lattice in a single, continuous measurement. This allows the unambiguous identification of the reconstructions on (111) surfaces where the intrinsic symmetry is masked by the 120 • domain structure and possible disorder.

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“…9,12,18 The significant improvement in quality of various group III-Sb based compounds grown on Si or GaAs substrates using AlSb buffer layer have been reported. [19][20][21][22][23][24][25][26] Despite the common usage of AlSb as a buffer layer for growing group III-Sb based compounds, it is not thoroughly understood how the AlSb buffer layer influences the growth of GaSb epilayers. AFM and RHEED, two prevalent characterization tools for investigating the epitaxy process, are not well suited to explain the interfacial phenomena.…”

Section: Introductionmentioning

confidence: 99%

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

Vajargah

Ghanad-Tavakoli

Preston

et al. 2013

Journal of Applied Physics

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The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates. V C 2013 AIP Publishing LLC. [http://dx.

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Dependence of the AlSb buffers on GaSb/GaAs(001) heterostructures

Cited by 33 publications

References 12 publications

The growth parameter influence on the crystal quality of InAsSb grown on GaAs by molecular beam epitaxy

The growth parameter influence on the crystal quality of InAsSb grown on GaAs by molecular beam epitaxy

Analysis of GaSb and AlSb reconstructions on GaSb(111)A- andB-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

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