Dependence of series resistance on operating current in p-n junction solar cells

Bhattacharya, Dipankar; Mansingh, Abhai; Swarup, Prem

doi:10.1016/0379-6787(86)90033-5

Cited by 18 publications

(3 citation statements)

References 10 publications

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“…In general, series resistance can arise from five different sources: (1) the back contact to the semiconductor; (2) the contact made by the probe wire; (3) the resistance of the quasi-neutral bulk semiconductor at the back contact/semiconductor interface; (4) the depletion layer edge at the semiconductor surface and ( 5) the particular distribution interface states located at the metal/semiconductor interface. Also, the value of R s changes from region to region due to inhomogeneity of barrier height, particular distribution of interface states and surface charges [22][23][24][25].…”

Section: Temperature Dependence Of Current-voltage Characteristicsmentioning

confidence: 99%

Influence of temperature and illumination on the electrical properties of p-ZnTe/n-CdTe heterojunction grown by molecular beam epitaxy

Farag¹,

Yahia²,

Wójtowicz³

et al. 2010

J. Phys. D: Appl. Phys.

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A set of p-ZnTe/n-CdTe heterojunctions were grown on conducting GaAs substrates by molecular beam epitaxy. The current density–voltage (J–V) and capacitance–voltage (C–V) characteristics measured in the temperature range 300–400 K were analysed in order to reveal the dominant carrier transport mechanisms through the junctions. The C–V measurements show that the device is linearly graded. The temperature dependence of the built-in potential and the impurity gradient of the device were determined. The deep defect states govern the current flow through the junctions. The measurements under the lower voltage region (V < 0.35 V) reveal at the p-ZnTe/n-CdTe interface, the presence of deep defect states with the activation energy of 0.52 eV. Under the higher forward bias voltage (V > 0.35 V), the space-charge-limited current governed the J–V characteristics with a single traps level, ΔE t = 0.55 eV. The p-ZnTe/n-CdTe device under different illumination intensities exhibit a significant photosensitivity proving that this kind of heterostructure can be regarded as a good candidate for photodiode applications.

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Section: Temperature Dependence Of Current-voltage Characteristicsmentioning

confidence: 99%

Influence of temperature and illumination on the electrical properties of p-ZnTe/n-CdTe heterojunction grown by molecular beam epitaxy

Farag¹,

Yahia²,

Wójtowicz³

et al. 2010

J. Phys. D: Appl. Phys.

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“…The variation of the lumped series resistance along the I–U curve was experimentally observed already by Wolf and Rauschenbach as early as in 1963 using the two‐light‐level method; it was further investigated in several works: experimentally, e.g., in refs. , analytically, e.g., in refs. , and numerically, e.g., in refs.…”

Section: Dark‐current Dependence Of the Series Resistancementioning

confidence: 99%

“…Moreover, there are indications from experiment that an even deeper examination of the validity of the standard equivalent circuit for large‐area silicon solar cells is needed: Several works in the literature show that the series resistance of large‐area silicon solar cells is not constant but varies with the operating conditions (cf., e.g., refs. ), whereas the standard equivalent circuit lacks this effect as it contains a standard ohmic resistor having a constant value. We found that this variation is only related to the dark diode forward current, and that this behavior can empirically be described by a slightly modified equivalent circuit .…”

Section: Introductionmentioning

confidence: 99%

Fundamental Aspects Concerning the Validity of the Standard Equivalent Circuit for Large‐Area Silicon Solar Cells

Wagner

Carstensen

Adelung

2019

Physica Status Solidi (a)

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The standard equivalent circuit of a solar cell amounts to a lumped description by separate diode and resistor elements. As its application to a large-area silicon solar cell effectively implies averaging the emitter resistance which, however, is closely coupled to the p-n junction, it is not self-evident that it works more or less well. Using an analytically solvable distributed series resistance model and systematically treating the deviations from the ideal case of zero emitter resistance, the equivalent circuit is found in linear order in the sheet resistivity. In this linear order, the lumped voltage losses are fully compatible with the integrated Joule losses; this compatibility turns out to be a necessary and sufficient condition for modeling the local series resistance of a large-area silicon solar cell. In higher orders of the sheet resistivity, however, the lumped voltage losses are not compatible with the integrated Joule losses, which means that the equivalent circuit cannot describe these higher orders. The equivalent circuit resulting from the linear-order lumped series resistance accounts for the experimentally observed variation of the lumped series resistance along the current-voltage characteristic, which turns out to be fully described by a dependence on the dark diode current only.

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Equivalent‐circuit analysis of solar‐cell degradation by light‐and electron‐beam irradiation

Shimizu

Horigome

1989

Electrical Engineering Japan

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Dependence of series resistance on operating current in p-n junction solar cells

Cited by 18 publications

References 10 publications

Influence of temperature and illumination on the electrical properties of p-ZnTe/n-CdTe heterojunction grown by molecular beam epitaxy

Influence of temperature and illumination on the electrical properties of p-ZnTe/n-CdTe heterojunction grown by molecular beam epitaxy

Fundamental Aspects Concerning the Validity of the Standard Equivalent Circuit for Large‐Area Silicon Solar Cells

Equivalent‐circuit analysis of solar‐cell degradation by light‐and electron‐beam irradiation

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