2006
DOI: 10.1063/1.2214128
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Dependence of saturation effects on electron confinement and injector doping in GaAs∕Al0.45Ga0.55As quantum-cascade lasers

Abstract: We report on a detailed experimental and theoretical analysis of the role of injector doping density on both the threshold current density (Jth) and the saturation current density (Jsat), determining the dynamic range of the quantum cascade lasers. The experimental results were obtained from two growth series of λ≈9μm GaAs∕Al0.45Ga0.55As quantum-cascade lasers based on single and double phonon resonance depopulation mechanisms. We derive a quasilinear dependence of Jth on the injector doping density of both de… Show more

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Cited by 17 publications
(18 citation statements)
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“…When calculating g, we must take into account the value of the expression given in the square brackets in Eq. (12), which is not the same for the optimized and reference structure, as well as the value of jv (2) j and the calculated wavelength. The differences are not significant, but can still lead to an evident difference of the nonlinear conversion efficiencies.…”
Section: Numerical Results and Discussionmentioning
confidence: 93%
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“…When calculating g, we must take into account the value of the expression given in the square brackets in Eq. (12), which is not the same for the optimized and reference structure, as well as the value of jv (2) j and the calculated wavelength. The differences are not significant, but can still lead to an evident difference of the nonlinear conversion efficiencies.…”
Section: Numerical Results and Discussionmentioning
confidence: 93%
“…We can notice that the relative increase of the nonlinear conversion efficiency is larger than the relative increase of the nonlinear susceptibility. The reason for this lies in the fact that g is not dependent solely on jv (2) j, but on other variables as well. When calculating g, we must take into account the value of the expression given in the square brackets in Eq.…”
Section: Numerical Results and Discussionmentioning
confidence: 99%
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“…The meaning of the remaining parameters is as typically used. The analysis of the above equation with numerical values of parameters as given in [9] shows that to provide modal gain at least 20 cm −1 at room temperature we need inversion ∼3×10 10 cm −2 (Fig. 8), which should allow for threshold current densities in the range (3-4) kA/cm −2 at 77 K in good quality devices (γ 32 = (12 − 14) meV) -see Fig.…”
Section: Device Processing and Characterisationmentioning
confidence: 99%
“…11 Achieving cw operation in MIR GaAs-based QCLs is a very challenging task due to the relatively high threshold current densities ͑I th ͒. Influence of the injector doping, 14 the lattice temperature, 15 and carrier escape via weakly localized ⌫ states 16 were attributed as major limiting factors, for the high temperature operation and attainable gain, that determine the increase of I th and dynamic working range of ϳ9 m GaAs-based QCLs. Nevertheless, cw operation has been reported 10,17 with operating temperatures up to 150 K. However, the output characteristics are still inferior compared to InP MIR QCL.…”
mentioning
confidence: 99%