Dependence of plasma current on object condition in atmospheric pressure non-thermal equilibrium argon plasma

Yambe, Kiyoyuki; Kuramoto, Naoki; Inagaki, Yasuyoshi

doi:10.1063/1.5116268

Cited by 9 publications

(3 citation statements)

References 32 publications

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“…In other words, the additional ground-line in the case of a grounded plate affects the IDBD current. The differences in IDBD between the two electric potential conditions of the glass plate seen in figure 2(b) are like those reported in [50]. In that study, the authors investigated the electrical features of an AC kHz Ar plasma jet impinging on metallic targets of increasing thermal conductivity (from Ti to Cu), which were grounded or maintained at a floating potential.…”

Section: Accepted Manuscriptmentioning

confidence: 55%

“…The mean electron temperature (T e ) and the electron density (n e ) in this case are expected to be higher. This hypothesis is reinforced by the results presented in [50], where an argon APPJ impinging on different metallic objects (placed at z = 10 mm) either grounded or maintained at a floating-potential was studied. The current (peak and time-averaged) and the excitation temperature of the APPJ in the case of the grounded objects were ~2.5 and ~1.14 times higher, respectively, implying a higher electron density and temperature compared to those corresponding to the floating-potential objects.…”

Section: Space-time Resolved Ar(1smentioning

confidence: 83%

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Experimental investigation of a ns-pulsed argon plasma jet for the fast desorption of weakly volatile organic compounds deposited on glass substrates at variable electric potential

Vazquez¹,

Bauville²,

Blin-Simiand³

et al. 2020

J. Phys. D: Appl. Phys.

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. Experimental investigation of a ns-pulsed argon plasmajet for the fast desorption of weakly volatile organic compounds deposited on glass substrates at variable electric potential

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Section: Accepted Manuscriptmentioning

confidence: 55%

Section: Space-time Resolved Ar(1smentioning

confidence: 83%

Experimental investigation of a ns-pulsed argon plasma jet for the fast desorption of weakly volatile organic compounds deposited on glass substrates at variable electric potential

Vazquez¹,

Bauville²,

Blin-Simiand³

et al. 2020

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…However, the process is dependent on the size of the etched area. For example, etching small substrates with a few tens of square centimeters is very different in etching time and uniformity than etching a 200 mm-wafer due to changes in the plasma current at the surface of the sample [32,33]. Two positive photoresists (AZ1505 and AZP4110, see Table 1) were exposed to plasma etching in a barrel reactor ECR plasma asher and an ICP reactive ion etching system.…”

Section: Dry Etchingmentioning

confidence: 99%

Clean-Room Lithographical Processes for the Fabrication of Graphene Biosensors

et al. 2020

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This work is on developing clean-room processes for the fabrication of electrolyte-gate graphene field-effect transistors at the wafer scale for biosensing applications. Our fabrication process overcomes two main issues: removing surface residues after graphene patterning and the dielectric passivation of metallic contacts. A graphene residue-free transfer process is achieved by using a pre-transfer, sacrificial metallic mask that protects the entire wafer except the areas around the channel, source, and drain, onto which the graphene film is transferred and later patterned. After the dissolution of the mask, clean gate electrodes are obtained. The multilayer SiO2/SiNx dielectric passivation takes advantage of the excellent adhesion of SiO2 to graphene and the substrate materials and the superior impermeability of SiNx. It hinders native nucleation centers and breaks the propagation of defects through the layers, protecting from prolonged exposition to all common solvents found in biochemistry work, contrary to commonly used polymeric passivation. Since wet etch does not allow the required level of control over the lithographic process, a reactive ion etching process using a sacrificial metallic stopping layer is developed and used for patterning the passivation layer. The process achieves devices with high reproducibility at the wafer scale.

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Plasma current regulated by balance between driving and restricting forces

Yambe

Inamura

2020

Physics of Plasmas

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In many plasma applications, the plasma current, which is determined by the plasma density and drift velocity, is an important parameter when investigating the induced phenomenon and its effects. However, it is unclear which physical parameters are responsible for regulating the current. Plasma is generated by a balance between the driving and restricting forces. The driving force originates from the electric and magnetic fields, and the restricting force originates from collisions between different species (electrons, ions, and neutral particles). When the electric field fluctuates over time, the pressure of the driving force is generated. The pressure of the driving force depends on the square of the electric field and the reciprocal of the repetition frequency. The pressure of the restricting force depends on the gas flow velocity and the collision frequency. When electrons and/or ions flow with the flowing neutral gas, a plasma current is generated from flowing charged particles. The magnitude of the plasma current is linearly proportional to the pressure caused by the driving force, and the variation in the plasma current depends on the pressure caused by the restricting force. In addition, the plasma current varies with the applied period of the voltage. Consequently, the plasma charge, which is the time integral of the plasma current, shows a linear relationship with the driving force and is thus regulated by the force balance between the driving and restricting forces. Therefore, the plasma current value and its generation time are regulated by the strength, applied period, and repetition frequency of the applied voltage and the neutral gas flow velocity.

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Dependence of plasma current on object condition in atmospheric pressure non-thermal equilibrium argon plasma

Cited by 9 publications

References 32 publications

Experimental investigation of a ns-pulsed argon plasma jet for the fast desorption of weakly volatile organic compounds deposited on glass substrates at variable electric potential

Experimental investigation of a ns-pulsed argon plasma jet for the fast desorption of weakly volatile organic compounds deposited on glass substrates at variable electric potential

Clean-Room Lithographical Processes for the Fabrication of Graphene Biosensors

Plasma current regulated by balance between driving and restricting forces

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