Dependence of photoluminescence peaks and ZnO nanowires diameter grown on silicon substrates at different temperatures and orientations

Yousefi, Ramin; Kamaluddin, B.

doi:10.1016/j.jallcom.2008.12.147

Cited by 78 publications

(46 citation statements)

References 36 publications

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“…Note that the sharp feature at 470 nm is due to fluorescence from one of the filters used, and can be ignored. From this figure, it can be seen that as the size of the nanorods decreases a blue-shift in the near-band-edge UV luminescence from 390 nm to 381 nm occurs, as has been observed by other groups [19,20]. The nanorods are too large for this to be attributed to a quantum confinement effect, as the diameter a significantly larger than the Bohr radius, so this is likely attributed to surface effects, which are more important for smaller rods, or to variation in the lattice strain.…”

Section: Growth Of Zno Nanorodssupporting

confidence: 84%

Laser-assisted hydrothermal growth of size-controlled ZnO nanorods for sensing applications

Henley¹,

Fryar²,

Jayawardena³

et al. 2010

Nanotechnology

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Abstract. Pulsed laser irradiation is used to seed the low-temperature hydrothermal growth of ZnO nanorods. UV laser irradiation produces ZnO nanoparticles in solution that act as nucleation seeds for the subsequent hydrothermal growth of the nanorods. By systematically varying the seed density and/or the concentration of the reactants, the diameter of the nanorods can be controlled over a wide range with a narrow size distribution. The nanorods are linked into multi-pod structures, due to nucleation at a central seed, but ultrasonic processing of the solutions is shown to yield isolated nanorods. Three dimensional networks of these multi-pod structures are fabricated by drop cating the solution onto interdigitated electrodes and gas sensors, operating at room temperature, for ethanol, and water vapour and UV photo-sensor devices are demonstrated.

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Section: Growth Of Zno Nanorodssupporting

confidence: 84%

Laser-assisted hydrothermal growth of size-controlled ZnO nanorods for sensing applications

Henley¹,

Fryar²,

Jayawardena³

et al. 2010

Nanotechnology

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“…Figure 4 shows the PL spectra of the ZnO thin films at room temperature consists of the UV emission band and the visible emission broadband. The UV emission at 375-381 nm is attributed to exciton recombination and is strongly related to the quality of the films [11]. The intensity of the UV emission increased with the presence of a 3C-SiC buffer layer; therefore, the optical properties of ZnO improved due to the SiC layer.…”

Section: Resultsmentioning

confidence: 99%

“…The intensity of the UV emission increased with the presence of a 3C-SiC buffer layer; therefore, the optical properties of ZnO improved due to the SiC layer. These improvements can be explained by the close lattice mismatch of the ZnO and SiC layers [11]. The origin of the visible broadband at 500 nm of the ZnO film is controversial, with some researchers reporting that it is caused by impurities and structural defects in the crystal, such as oxygen vacancies and zinc interstitials [11].…”

Section: Resultsmentioning

confidence: 99%

“…These improvements can be explained by the close lattice mismatch of the ZnO and SiC layers [11]. The origin of the visible broadband at 500 nm of the ZnO film is controversial, with some researchers reporting that it is caused by impurities and structural defects in the crystal, such as oxygen vacancies and zinc interstitials [11]. However, other researchers concluded that the visible emission broadband is the characteristic of ZnO nanostructures [12].…”

Section: Resultsmentioning

confidence: 99%

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Characteristics of ZnO Films Deposited on Poly 3C-SiC Buffer Layer by Sol-Gel Method

Phan¹,

Chung²

2011

Transactions on Electrical and Electronic Materials

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Keywords: Zinc oxide nanoparticles, 3C-SiC buffer layer, Sol-gel method This work describes the characteristics of zinc oxide (ZnO) thin films formed on a polycrystalline (poly) 3C-SiC buffer layer using a sol-gel process. The deposited ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence (PL) spectra. ZnO thin films grown on the poly 3C-SiC buffer layer had a nanoparticle structure and porous film. The effects of post-annealing on ZnO film were also studied. The PL spectra at room temperature confirmed the crystal quality and optical properties of ZnO thin films formed on the 3C-SiC buffer layer were improved due to close lattice mismatch in the ZnO/3C-SiC interface.

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“…In addition, the interest in ZnO is fueled and fanned by its prospects in electronics and photonics applications, viz. transparent electrodes in solar cells, flat display devices and novel solid-state ultraviolet (UV) lasers owing to its direct wide band gap [1][2][3][4][5][6][7].Many works have been done on the fabrication of ZnO micro/nanostructures with high aspect ratios using metalorganic chemical vapor deposition [8], thermal evaporation and thermal decomposition [9]. But these techniques appear to be involved process with many complex steps, require sophisticated equipment and rigorous experimental conditions.…”

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confidence: 99%

Effect of compaction pressure of green body and heating current on photoluminescence property of ZnO crystal grown by electric current heating method

Sutjipto¹,

Mazwir²,

Yee³

et al. 2018

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract. In this study, we reported the effect of applied compaction pressure on green body and electric current heating on ceramic bar on the ZnO crystal growth and its photoluminescence characteristic. Crystals grown on ZnO bar sintered by 1100 o C were mostly on (1 0 1) orientation. Sample with 3.0 ton and 3.0 A for applied pressure and current, respectively revealed the shortest photoluminescence (PL) wavelength of 409.5 nm with highest emission energy of 3.03 eV. IntroductionZnO has gained substantial interest in the research community because of its large exciton binding energy (60 meV) and wide direct band gap (Eg ∼ 3.37 eV) at room temperature (R.T.). This large exciton binding energy paves the way for an intense near-band-edge excitonic emission such as lasing action at R.T. and higher temperatures, because this value is 2.4 times larger than that of the room temperature thermal energy (kBT = 25 meV). In addition, the interest in ZnO is fueled and fanned by its prospects in electronics and photonics applications, viz. transparent electrodes in solar cells, flat display devices and novel solid-state ultraviolet (UV) lasers owing to its direct wide band gap [1][2][3][4][5][6][7].Many works have been done on the fabrication of ZnO micro/nanostructures with high aspect ratios using metalorganic chemical vapor deposition [8], thermal evaporation and thermal decomposition [9]. But these techniques appear to be involved process with many complex steps, require sophisticated equipment and rigorous experimental conditions. However, some of them have drawbacks like long reaction time, toxic templets and exotic metal catalysts, and low purity or poor crystallite quality of products, which may influence the quality and applications of ZnO. So there is still the need for developing a method that can produce the ZnO micro/nanostructures in laboratory environment with high quality, high repeatability and low cost process for a wide range of applications. Hence, a novel technique called ECH for the preparation of ZnO micro/nanocrystals [10][11][12].When a certain direct current flowed through a sample of ZnO ceramic bar, the sample was Jouleheated, and the crystal growth occurred. ZnO is a key technological material. The lack of a centre of symmetry in wurtzite, combined with large electromechanical coupling, results in strong piezoelectric

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Dependence of photoluminescence peaks and ZnO nanowires diameter grown on silicon substrates at different temperatures and orientations

Cited by 78 publications

References 36 publications

Laser-assisted hydrothermal growth of size-controlled ZnO nanorods for sensing applications

Laser-assisted hydrothermal growth of size-controlled ZnO nanorods for sensing applications

Characteristics of ZnO Films Deposited on Poly 3C-SiC Buffer Layer by Sol-Gel Method

Effect of compaction pressure of green body and heating current on photoluminescence property of ZnO crystal grown by electric current heating method

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