Dependence of oxygen flow on optical and electrical properties of DC-magnetron sputtered ITO films

Bender, Marcus; Seelig, W.; Daube, Conner; Frankenberger, H; Ocker, B.; Stollenwerk, Jochen

doi:10.1016/s0040-6090(98)00521-5

Cited by 193 publications

(79 citation statements)

References 11 publications

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“…The effective 040004-2 absorptions in the visible light and the infrared region (Fig. 4) also show an increase of the transparency of ITO with the percentage of O 2 during the MS process as shown in previous studies 8,9 .…”

Section: Properties Of the Ito (Ms) Layers With Different O 2 Ratiossupporting

confidence: 82%

Bifacial crystalline silicon homojunction cells contacted with highly resistive TCO layers

Bruhat¹,

Desrues²,

Grange³

et al. 2018

AIP Conference Proceedings

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Section: Properties Of the Ito (Ms) Layers With Different O 2 Ratiossupporting

confidence: 82%

Bifacial crystalline silicon homojunction cells contacted with highly resistive TCO layers

Bruhat¹,

Desrues²,

Grange³

et al. 2018

AIP Conference Proceedings

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“…Indium tin oxide (ITO) thin film is one kind of transparent conductive films. Due to its high transmittance and good physical and chemical properties [1,2], it is widely used in optical devices like flat panel displays, solar cells, sensors, and so on [3][4][5]. There are many different methods for the fabrication of ITO thin films including the magnetron sputtering method [6,7], thermal evaporation method [8], plasma ion-assisted evaporation [9], reactive electron-beam evaporation [10], and sol-gel method [11].…”

Section: Introductionmentioning

confidence: 99%

Effect of Oxygen Flow Rate on the Optical, Electrical, and Mechanical Properties of DC Sputtering ITO Thin Films

Tien

Lin

Chang

et al. 2018

Advances in Condensed Matter Physics

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This study presents the effect of oxygen flow rate on the optical, electrical, and mechanical properties of indium tin oxide (ITO) thin films prepared by the DC magnetron sputtering technique. The oxygen flow rate was varied from 10 to 50 sccm. The ITO thin films deposition under different oxygen flow rates exhibits different properties. We used an optical spectrometer to measure the optical transmittance and a four-point probe instrument to determine the resistivity. A home-made Twyman-Green interferometer was used to evaluate residual stress and a microscopic interferometer was used to measure the surface roughness of ITO thin films. The experimental results show that the average optical transmittance is larger than 85% in visible range; the electrical resistivity has a minimum 6.85 × 10 −4 ohm-cm for the oxygen flow of 10 sccm. The residual stress is varied from −0.15 GPa to −0.34 GPa in the range of 10-50 sccm. The root-mean-square (rms) surface roughness is changed from 2.64 nm to 2.74 nm as the oxygen flow rate increases. The results show that the oxygen flow rate has significant influence on the electrical resistivity, residual stress, and surface roughness of the ITO thin film.

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“…The typical model used to describe the conductivity of the ITO takes into account the carrier density determined both by the oxygen vacancies and by the doping tin atoms, acting as electron donors when the tin oxidation state is (IV), as in SnO 2 [15][16][17]. Of course, the annealing treatment, performed in oxidizing atmosphere, promotes the oxidation of the layer (reducing the oxygen vacancies and consequently reducing the amount of the charge carries) increasing the resistivity of the ITO layers.…”

Section: Resultsmentioning

confidence: 99%

Thermal induced changes of lead zirconium titanate films and their consequences for liquid crystal devices applications

Castriota

D’Elia

Marino

et al. 2010

Philosophical Magazine

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Dependence of oxygen flow on optical and electrical properties of DC-magnetron sputtered ITO films

Cited by 193 publications

References 11 publications

Bifacial crystalline silicon homojunction cells contacted with highly resistive TCO layers

Bifacial crystalline silicon homojunction cells contacted with highly resistive TCO layers

Effect of Oxygen Flow Rate on the Optical, Electrical, and Mechanical Properties of DC Sputtering ITO Thin Films

Thermal induced changes of lead zirconium titanate films and their consequences for liquid crystal devices applications

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