Dependence of nickel gettering on crystalline nature in as-grown Czochralski silicon wafer

Correlation between Copper Precipitation and Grown-In Oxygen Precipitates in 300~mm Czochralski Silicon Wafer

“…The grown-in oxygen precipitates exert substantial inuence on oxygen precipitation and its related internal gettering (IG) capability [1]. It has been recently reported that the IG eciencies are remarkably dierent along the axial direction of wafer, due to the dierent densities and sizes of grown-in oxygen precipitates [2]. Generally, the grown-in oxygen precipitates are too small to be observed by the common light-scattering and etching techniques.…”