Dependence of n-cSi/MoOx Heterojunction Performance on cSi Doping Concentration

Nasser, Hisham; Kökbudak, Gamze; Mehmood, Haris; Turan, Raşit

doi:10.1016/j.egypro.2017.09.267

Cited by 20 publications

(21 citation statements)

References 7 publications

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“…It is also observed that the PV performance of the proposed structure deteriorates at elevated cSi doping levels due to the effects of BGN and reduced energy barrier width. The same behaviour was also demonstrated in our previous experimental findings where employing lightly doped cSi wafer in n‐cSi/MoO x cSi HJ solar cell design results in a higher conversation efficiency as compared with the same solar cell design with a highly doped n‐cSi wafer . At low‐doping levels, BGN has no significance impact on the PV performance, which was confirmed with our simulation by turning on and off the BGN model in ATLAS.…”

Section: Resultssupporting

confidence: 90%

“…The same behaviour was also demonstrated in our previous experimental findings where employing lightly doped cSi wafer in n-cSi/MoO x cSi HJ solar cell design results in a higher conversation efficiency as compared with the same solar cell design with a highly doped n-cSi wafer. 47 At low-doping levels, BGN has no significance impact on the PV performance, which was confirmed with our simulation by turning on and off the BGN model in ATLAS. The current J-V curve results are summarised in Table 5.…”

Section: Effect Of Moo X Thickness On Parasitic Absorptionsupporting

confidence: 82%

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Simulation of an efficient silicon heterostructure solar cell concept featuring molybdenum oxide carrier-selective contact

et al. 2017

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Summary Transition metal oxides/silicon heterocontact solar cells are the subject of intense research efforts owing to their simpler processing steps and reduced parasitic absorption as compared with the traditional silicon heterostructure counterparts. Recently, molybdenum oxide (MoOx, x < 3) has emerged as an integral transition metal oxide for crystalline silicon (cSi)‐based solar cell based on carrier‐selective contacts (CSCs). In this paper, we physically modelled the CSC‐based cSi solar cell featuring MoOx/intrinsic a‐Si:H/n‐type cSi/intrinsic a‐Si:H/n+‐type a‐Si:H for the first time using Silvaco technology computer‐aided design simulator. To analyse the optical and electrical properties of the proposed solar cell, several technological parameters such as work function and thickness of MoOx contact layer, intrinsic a‐Si:H band gap, interface recombination, series resistance, and temperature coefficient have been evaluated. It has been shown that higher work function of MoOx induces the formation of a favourable Schottky barrier height as well as an inversion at the front interface, stimulating least resistive path for holes. Utilising thinner MoOx layer implies reduced tunnelling of minority charge carriers, thus enabling the device to numerically attain 25.33% efficiency. With an optimised interface recombination velocity and reduced parasitic absorption, the proposed device exhibited higher Voc of 752 mV, Jsc of 38.8 mA/cm2, fill‐factor of 79.0%, and an efficiency of 25.6%, which can be termed as the harbinger for industrial production of next‐generation efficient solar cell technology.

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Section: Resultssupporting

confidence: 90%

Section: Effect Of Moo X Thickness On Parasitic Absorptionsupporting

confidence: 82%

Simulation of an efficient silicon heterostructure solar cell concept featuring molybdenum oxide carrier-selective contact

et al. 2017

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“…Deposition rate of Ag thin film sandwiched between two MoO x layers is varied between 0.5 and 2.0 Å/second, and its effect on the morphological, optical, and electrical properties of cells structure featuring MoO x /Ag/MoO x HTTCE multilayers is investigated. In our previous studies, we have shown that 15 nm thick MoO x is optimal for the layer in direct contact with the c‐Si substrate . Layers thinner than 15 nm cannot fully cover even flat Si surface resulting in local direct contact between the Si surface and the subsequent metal contact.…”

Section: Resultsmentioning

confidence: 99%

“…In our previous studies, we have shown that 15 nm thick MoO x is optimal for the layer in direct contact with the c-Si substrate. 32 Layers thinner than 15 nm cannot fully cover even flat Si surface resulting in local direct contact between the Si surface and the subsequent metal contact. Therefore, in this section, the thicknesses of MoO x (in direct contact with c-Si), Ag, and outer MoO x are kept fixed at 15, 10, and 30 nm, respectively.…”

Section: Optimization Of Ag Deposition Ratementioning

confidence: 99%

“…The hole selective behavior of MoO x contact has been proven in studies implementing it on n-type c-Si with 28,31 and without passivation layer between c-Si and MoO x . 27,29,32,33 In an n-type c-Si/MoO x heterojunction, the large work function difference between c-Si and MoO x induces a band bending that depletes the c-Si's surface from electrons; thus, formation of this contact acts as a quasi-p-type hole collecting contact. 30,34,35 MoO x has also been used in DMD structures, as MoO x /Ag/MoO x electrodes are shown to work successfully on c-Si 18 and organic solar cells.…”

Section: Introductionmentioning

confidence: 99%

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MoO _x /Ag/MoO _x multilayers as hole transport transparent conductive electrodes for n‐type crystalline silicon solar cells

et al. 2020

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Summary Substitution of highly doped layers with conventional transparent conductive electrodes as carrier collecting and selective contacts in conventional crystalline silicon (c‐Si) solar cell configurations is crucial in increasing affordability of solar cells by lowering material costs. In this study, oxide/metal/oxide (OMO) multilayers featuring molybdenum oxide (MoOx) and silver (Ag) thin films are developed by thermal evaporation technique, as dopant‐free hole transport transparent conductive electrodes (HTTCEs) for n‐type c‐Si solar cells. Semidopant‐free asymmetric heterocontact (semi‐DASH) solar cells on n‐type c‐Si utilizing OMO multilayers are fabricated. The effect of outer MoOx layer thickness and Ag deposition rate on the photovoltaic characteristics of the fabricated semi‐DASH solar cells are investigated. A comparison of front side pyramid textured and flat surface solar cells is performed to optimize the optical and electrical properties. Highest efficiency of 9.3% ± 0.2% is achieved in a pyramid textured semi‐DASH c‐Si solar cell with 15/10/30 nm of HTTCE structure.

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Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO ₂ as passivation layer

et al. 2020

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Conventional silicon heterojunction solar cells employ defects-prone a-Si:H layers for junction formation and passivation purposes. Substituting these layers with hole-selective MoO x and electron-selective TiO x can reduce parasitic absorption and energy band offsets issues associated with doped silicon films. In this work, dopant-free asymmetric heterostructure Si solar cells are studied with and without SiO 2 passivation layer, and their performance has been compared. The inclusion of ultrathin SiO 2 insulator as a passivation layer promotes significant band bending that induces interface inversion of crystalline silicon as well as maintains the electric field required to tunnel charge carriers. The energy band diagram studies and variation of oxide thickness show that the IV characteristics of the solar cell critically depend on the insulator thickness; as the carriers tunnelling through the insulator becomes negligible at larger thicknesses. The simulated structure with MoO x as front holeselective contact and without any passivation exhibited conversion efficiency of 15.73%, which improved to 18.69% by incorporating passivated a-Si:H. However, by employing rear SiO 2 /TiO x stack with the front SiO 2 /MoO x , the device performance enhanced to open-circuit voltage of 785 mV, short-circuit current density of 41 mA/cm 2 , fill factor of 77%, and simulated conversion efficiency of 24.83%, which is~10% enhancement in the performance as compared to reference device employing traditional a-Si:H with dopant-free films. Novelty Statement For the first time, a dopant-free asymmetric silicon heterostructure solar cell (DASH) employing silicon oxide (SiO 2) as a passivation layer has been physically modelled using Silvaco TCAD. The dopant-free MoO x and TiO x as holeand electron-selective contacts have been incorporated. An ultrathin SiO 2 promotes band bending that induces interface inversion of absorber as well as facilitating carrier tunnelling. An efficiency of 24.83% has been numerically attained which is the best performance among DASH structures designed with oxide passivation. The 2-D cross-section view of the proposed device employing dopant-free layers and oxide passivated film is illustrated in Figure 1 for which we have applied memory intensive numerical method based on the computation of Poisson, charge transport and continuity equations in the Silvaco ATLAS

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Dependence of n-cSi/MoOx Heterojunction Performance on cSi Doping Concentration

Cited by 20 publications

References 7 publications

Simulation of an efficient silicon heterostructure solar cell concept featuring molybdenum oxide carrier-selective contact

Simulation of an efficient silicon heterostructure solar cell concept featuring molybdenum oxide carrier-selective contact

MoO _x /Ag/MoO _x multilayers as hole transport transparent conductive electrodes for n‐type crystalline silicon solar cells

Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO ₂ as passivation layer

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Dependence of n-cSi/MoOx Heterojunction Performance on cSi Doping Concentration

Cited by 20 publications

References 7 publications

Simulation of an efficient silicon heterostructure solar cell concept featuring molybdenum oxide carrier-selective contact

Simulation of an efficient silicon heterostructure solar cell concept featuring molybdenum oxide carrier-selective contact

MoO x /Ag/MoO x multilayers as hole transport transparent conductive electrodes for n‐type crystalline silicon solar cells

Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO 2 as passivation layer

Contact Info

Product

Resources

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MoO _x /Ag/MoO _x multilayers as hole transport transparent conductive electrodes for n‐type crystalline silicon solar cells

Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO ₂ as passivation layer