2006
DOI: 10.1016/j.jmmm.2006.02.259
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Dependence of magnetic properties on ferromagnetic layer thickness in trilayer Co/Ge/Co films with granular semiconducting spacer

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Cited by 15 publications
(4 citation statements)
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“…On the other hand, a considerable research interest has been devoted to study the physical properties of the trilayer systems both experimentally and theoretically in recent years. For example, NiFe/NiO/Co [1], Co/M/Fe 3 O 4 [2], NiFe/Cu/IrMn [3], Co/Ge/Co [4], Au/FePt/Au [5], LaBiMnO 3 /MgO/Co [6], Fe/Cr/Fe [7], NiFe/Bi/ NiFe [8], Co/Nb/Fe [9], Ni/Cu/Co [10], Co/Nb/Co [11], FeCo/Au/FeCo [12], NiFe/NB/ NiFe [13], Fe/MgO/Fe [14], Fe/Al/Fe [15], Pt/Co/Pt [16], FePt/Pt/Cr [17], YBCO/LCMO/YBCO [18], NiFe/FeMn/NiFe [19] have been studied experimentally. One can cite many more experimental works on trilayer systems.…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, a considerable research interest has been devoted to study the physical properties of the trilayer systems both experimentally and theoretically in recent years. For example, NiFe/NiO/Co [1], Co/M/Fe 3 O 4 [2], NiFe/Cu/IrMn [3], Co/Ge/Co [4], Au/FePt/Au [5], LaBiMnO 3 /MgO/Co [6], Fe/Cr/Fe [7], NiFe/Bi/ NiFe [8], Co/Nb/Fe [9], Ni/Cu/Co [10], Co/Nb/Co [11], FeCo/Au/FeCo [12], NiFe/NB/ NiFe [13], Fe/MgO/Fe [14], Fe/Al/Fe [15], Pt/Co/Pt [16], FePt/Pt/Cr [17], YBCO/LCMO/YBCO [18], NiFe/FeMn/NiFe [19] have been studied experimentally. One can cite many more experimental works on trilayer systems.…”
Section: Introductionmentioning
confidence: 99%
“…In our previous works [3,4], we fabricated Co/Ge/Co trilayer films and studied their magnetic properties in dependence of the fabrication conditions and a semiconductor spacer thickness. We established that at a certain deposition rate and substrate temperature, the two-phase magnetic structure can form in which hexagonal cobalt grains are distributed in a cubic cobalt matrix.…”
Section: Introductionmentioning
confidence: 99%
“…Researches on metal-semiconductor hybrid structure are mainly focused on silicon based, germanium based, ZnTe based, and diluted magnetic semiconductor (DMS) based systems. And the origin of the antiferromagnetic (AF) coupling and magnetoresistance (MR) are intensively investigated [9][10][11][12][13][14][15][16][17][18][19][20][21]. The temperaturedependent sign-changed MR was found in DMS systems, such as V-doped ZnTe [15], Cr-doped ZnTe [16], (Mn,Co)-co-doped ZnO films [17,18], Cr-doped tin-doped indium oxide (ITO) films [19], * Corresponding author.…”
Section: Introductionmentioning
confidence: 99%