1993
DOI: 10.1109/3.199289
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Dependence of high-speed properties on the number of quantum wells in 1.55 mu m InGaAs-InGaAsP MQW lambda /4-shifted DFB lasers

Abstract: Optical Gain Formulas for 1.55 pm Strained Quaternary Quantum Well Lasers," IEEE J. Quantum Electron., to be published. Received 1-20-95 Microwave and Optical Technology Letters, 9/3, 153-156 0 1995 John Wiley & Sons, Inc. CCC 0895-2477/95divergence condition at the cost of losing the sparsity of the matrices. Lee [7] employed a hybrid vector finite-element method, in which edge elements and first-order nodal finite element basis functions are used to span the transverse and the z components of the electric fi… Show more

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Cited by 38 publications
(9 citation statements)
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“…When the active region is formed from a stack of thin strained QW's, the electrons which escape from the first few wells by thermionic emission have a chance to be recaptured by the next wells, thus reducing the temperature sensitivity of the threshold current [3 11 and improving the bandwidth [32], [33]. Fig.…”
Section: B Static Characteristicsmentioning
confidence: 99%
“…When the active region is formed from a stack of thin strained QW's, the electrons which escape from the first few wells by thermionic emission have a chance to be recaptured by the next wells, thus reducing the temperature sensitivity of the threshold current [3 11 and improving the bandwidth [32], [33]. Fig.…”
Section: B Static Characteristicsmentioning
confidence: 99%
“…The threshold current density th was estimated to be 50 and 35 kA/cm2 for 5x7prn2 and 7x1Oim2 devices, respectively, which was about 5 times higher than the theoretically predicted value. This discrepancy may be caused by non uniform current injection into the active layer which results from the lateral diffusion in both the p and n cladding layer [11]. …”
Section: Im Ingaaspfinp Lasersmentioning
confidence: 99%
“…However, the single-mode yield is low due to the random facet phase introduced by cleaving [4]. Another approach is to incorporate a X/4 phase-shifted region in the middle of the laser cavity in combination with low AR coating on both facets [5], [6] to achieve a high dynamic single-mode yield, but the device performance is more sensitive to spatial holeburning [7].…”
Section: Introductionmentioning
confidence: 99%