Dependence of electronic properties of polysilicon grain size and intragrain defects

Mathian, G.; Amzil, H.; Zehaf, M.; Crest, J.P.; Psaila, E.; Martinuzzi, S.; Oualid, J.

doi:10.1016/0038-1101(83)90114-4

Cited by 54 publications

(5 citation statements)

References 8 publications

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“…As for the influence of grain boundaries (GB), while it is known that minority carrier properties depend on the grain size up to 1 mm (7,8), it has been also suggested that the electrical effects of GB could depend on the type of boundary and on its interaction with dislocations and impurities (7). This does not necessarily mean, as has been strongly felt in the past, that in polycrystalline materials the purity requirements are somewhat relaxed with respect to a single crystal material but that the impurities behave, in polycrystalline samples in a rather different fashion than in single crystal material.…”

mentioning

confidence: 99%

On the Effect of Impurities on the Photovoltaic Behavior of Solar Grade Silicon: II . Influence of Titanium, Vanadium, Chromium, Iron, and Zirconium on Photovoltaic Behavior of Polycrystalline Solar Cells

Pizzini

Bigoni

Beghi

et al. 1986

J. Electrochem. Soc.

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Structural, electrical, and photovoltaic properties of single impurity doped polycrystalline silicon were investigated in order to forecast the behavior of more complicated impurity matrixes, like those deriving from upgrading MG silicon. To this purpose, silicon was doped with increasing amounts of titanium, vanadium, chromium, iron, and zirconium, and the diffusion length of minority carriers was measured as a function of the impurity concentration and microstructural features like grain boundaries (GB), dislocations, twins, and stacking faults. Results are displayed in three-dimensional diagrams which permit observations on the dependence of LD simultaneously with the impurity concentration and with the total density of electrically active structural defects. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 131.111.164.128 Downloaded on 2015-08-19 to IP 2364 J. Electrochem. Soc.: SOLID-STATE SCIENCE AND TECHNOLOGY November 198690% of the charge is already solidified and cutting the ingot parallel to the vertical axis of the furnace in order to determine the shape of the solidification interface.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 131.111.164.128 Downloaded on 2015-08-19 to IP Vol. 133, No. 11 SOLAR GRADE SILICON 2365 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 131.111.164.128 Downloaded on 2015-08-19 to IP

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mentioning

confidence: 99%

On the Effect of Impurities on the Photovoltaic Behavior of Solar Grade Silicon: II . Influence of Titanium, Vanadium, Chromium, Iron, and Zirconium on Photovoltaic Behavior of Polycrystalline Solar Cells

Pizzini

Bigoni

Beghi

et al. 1986

J. Electrochem. Soc.

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“…Such i. s not the case, however, for the majority carrier. And there is also experimental evidence that the ratio of these two mobilities is nearly constant in both single-and poly-crystal silicon [15]. Thus, the minority carrier mobility p. may be expressed as…”

Section: -4mentioning

confidence: 99%

“…where r is about 2.5 [15], and P. err is effective mobility. For doped materials, P. err is very close to the majority carrier mobility in polysilicon and can be represented by [13] 1…”

Section: -4mentioning

confidence: 99%

Impurity and Defect Characterization in Silicon (Final Technical Report)

Rohatgi¹,

Chen²,

Doolittle³

et al. 1992

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“…The purpose of the present section is to determine to what extent the EMC model can be used in order to calculate the photovoltaic properties from the measurement of an effective diffusion length Leff in polycrystalline silicon [3,5] by means of the Surface PhotoVoltage (SPV) method [24]. This forecast is very important since this measurement is relatively easy and does not need the full realization of a solar cell which is arduous and expensive.…”

Section: Base Doping Concentration Influence -mentioning

confidence: 99%

“…Polycrystalline silicon is different from monocrystalline silicon essentially due to the presence of grain boundaries (gb) which act as recombination centres for excess carriers [1,2] and which contribute to a marked decrease of solar cell efficiencies [3][4][5][6]. The gb recombination of the excess carriers takes place via the gb interface states which can be due to the dangling bonds, the dislocations, or the impurities segregated or diffused into the grain boundaries.…”

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confidence: 99%

3D-Modelling of polycrystalline silicon solar cells

Dugas¹,

Oualid²

1987

Rev. Phys. Appl. (Paris)

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2014 Nous nous intéressons à l'influence des joints de grains sur les principaux paramètres qui caractérisent les photopiles en silicium polycristallin. Nous calculons la vitesse de recombinaison effective à l'aide d'une méthode auto-consistante qui tient compte de la courbure du quasi-niveau de Fermi des minoritaires dans la région de charge d'espace associée au joint et dans la région quasi neutre des grains. En nous basant sur cette étude, nous avons tracé à l'aide d'un modèle à 3 dimensions une série d'abaques qui permettent de prévoir les variations des propriétés photovoltaïques en fonction des grandeurs caractéristiques d'un matériau semiconducteur polycristallin : dimension g des grains, longueur de diffusion Ln et dopage NA des grains et vitesse de recombinaison interfaciale S aux joints de grains. Nous montrons que le rendement peut être augmenté en ajustant le dopage de la base des photopiles. Le dopage optimum est donné en fonction de la densité des états d'interface et de la dimension des grains. Enfin, nous définissons une longueur de diffusion effective dans un matériau polycristallin prenant en compte la recombinaison aux joints de grains.

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Dependence of electronic properties of polysilicon grain size and intragrain defects

Cited by 54 publications

References 8 publications

On the Effect of Impurities on the Photovoltaic Behavior of Solar Grade Silicon: II . Influence of Titanium, Vanadium, Chromium, Iron, and Zirconium on Photovoltaic Behavior of Polycrystalline Solar Cells

On the Effect of Impurities on the Photovoltaic Behavior of Solar Grade Silicon: II . Influence of Titanium, Vanadium, Chromium, Iron, and Zirconium on Photovoltaic Behavior of Polycrystalline Solar Cells

Impurity and Defect Characterization in Silicon (Final Technical Report)

3D-Modelling of polycrystalline silicon solar cells

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