Abstract:In this study, we fabricated MOSFETs with Al2O3/InGaAs or HfO2/Al2O3/InGaAs gate stacks. The surface was subjected to nitrogen plasma and trimethylaluminum cleaning prior to low-temperature atomic layer deposition. Electron mobility was extracted using the capacitance–gate voltage (C–VG) and drain current–gate voltage (ID–VG) characteristics. We determined that the mobility decreased when the gate voltage sweeping width increased during C–VG and ID–VG measurements. In addition, we determined that the lowering … Show more
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