Mater. Adv.
 2022
DOI: 10.1039/d2ma00438k
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Dependence of defect structure on In concentration in InGaN epilayers grown on AlN/Si(111) substrate

Arun Malla Chowdhury
1
,
Deependra Kumar Singh
2
,
Basanta Roul
3
et al.

Abstract: InGaN epilayers with different indium concentrations have been grown on 100 nm thick AlN/n-Si (111) template by plasma assisted molecular beam epitaxy. The sample with least indium (In) content is...

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