Dependence of Ce3+ - related photo- and thermally stimulated luminescence characteristics on Mg2+ content in single crystals and epitaxial films of Gd3(Ga,Al)5O12:Ce,Mg

Babin, V.; Boháček, P.; Jurek, K.; Kučera, Miroslav; Nikl, M.; Zazubovich, S.

doi:10.1016/j.optmat.2018.05.087

Cited by 27 publications

(37 citation statements)

References 46 publications

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“…Gd3Ga3Al2O12 (GAGG) single crystals grown in Ref. [13] using the Czochralski technique, were investigated. The oxides Gd2O3, Ga2O3 and Al2O3 were of the purity 5 N (99.999%), and the CeO2 dopant was of the purity 99.95%.…”

Section: Methodsmentioning

confidence: 99%

“…The recombination of electrons with intrinsic hole centers can be nonradiative or accompanied with the intrinsic luminescence (see, e.g., Refs. [13,17,23]). The Ce 3+ -related electron recombination lumines-cence appears only as a result of electrons recombination with the hole Ce 4+ centers.…”

Section: Temperature Dependences Of the X-ray Excited Luminescence Inmentioning

confidence: 99%

“…5b, dashed line). The depths of the corresponding traps Et vary from 0.02 eV to 0.4 eV [9,13] (from 0.05 eV to 0.24 eV, according to Refs. [5,6]).…”

Section: Temperature Dependences Of the X-ray Excited Luminescence Inmentioning

confidence: 99%

“…The intensity decrease at T > 220 K is most probably caused by the thermal quenching of the Ce 3+ lumines-cence (see, e.g., Refs. [4,13,14]).…”

Section: Temperature Dependences Of the X-ray Excited Luminescence Inmentioning

confidence: 99%

“…Refs. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15], and references therein). However, physical processes taking place in scintillation mechanism of these materials still need more detailed study.…”

Section: Introductionmentioning

confidence: 99%

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On low-temperature luminescence quenching in Gd3(Ga,Al)5O12:Ce crystals

et al. 2019

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Temperature dependences of the photoluminescence and X-ray excited luminescence intensity and thermally stimulated luminescence glow curves are measured in the 4.2-300 K temperature range for the undoped and Ce 3+-doped Gd3(Ga,Al)5O12 crystals. The conclusion is made that no low-temperature quenching of the Ce 3+-related photoluminescence takes place. In both the undoped and the Ce 3+-doped crystals, temperature dependences of the X-ray excited recombination luminescence intensity correlate with the position and shape of thermally stimulated luminescence glow curve peaks of the hole origin. Low-temperature quenching of the X-ray excited luminescence in these crystals is explained by the fact that at low temperatures, free holes are trapped at oxygen ions while electrons are trapped at various intrinsic defects. In Ce 3+doped Gd3(Ga,Al)5O12 crystals, thermally stimulated release of the trapped holes and electrons and their subsequent recombination at Ce 3+ ions result in the enhancement of the Ce 3+-related electron recombination luminescence with the increasing temperature in the 10-180 K range.

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Section: Methodsmentioning

confidence: 99%

Section: Temperature Dependences Of the X-ray Excited Luminescence Inmentioning

confidence: 99%

“…5b, dashed line). The depths of the corresponding traps Et vary from 0.02 eV to 0.4 eV [9,13] (from 0.05 eV to 0.24 eV, according to Refs. [5,6]).…”

Section: Temperature Dependences Of the X-ray Excited Luminescence Inmentioning

confidence: 99%

“…The intensity decrease at T > 220 K is most probably caused by the thermal quenching of the Ce 3+ lumines-cence (see, e.g., Refs. [4,13,14]).…”

Section: Temperature Dependences Of the X-ray Excited Luminescence Inmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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On low-temperature luminescence quenching in Gd3(Ga,Al)5O12:Ce crystals

et al. 2019

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Effect of Carbon Doping on F‐Type Defects in YAG and YAG:Ce Crystals

Jia

Zhu

Boyaryntseva

et al. 2021

Physica Status Solidi (b)

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Ce‐doped yttrium aluminum garnet (YAG) is among the efficient rare‐earth garnet scintillators and phosphors. Herein, a computational and experimental study of complex F‐type defect centers formed in YAG by doping with cerium and carbon is addressed. The formation energies determined by ab initio calculations of different defects and atomic chemical potentials in YAG:Ce,C are discussed in O‐poor and O‐rich conditions corresponding to the crystal growth under Ar+CO reducing atmosphere, and postgrowth annealing in air, respectively. It is shown that as‐grown crystals contain numerous positively charged defects responsible for F‐type center formation, whereas mainly negative‐charged defects are remained after the annealing in air. The negatively charged defects located nearby Ce luminescence center occupying Y site may stabilize cerium in the tetravalent state and promote a hole transport to this luminescence center. This describes a high scintillation efficiency of Ce,C‐doped garnets. Furthermore, YAG:C and YAG:Ce,C with a high carbon concentration, in addition to luminescence peaked at 400 ns ascribed to F+‐type centers, possess a fast luminescence peaked around 650 nm that may be attributed to the complex defect centers. These unveiled features of the luminescence process in rare‐earth garnets may contribute to the development of efficient luminescence materials.

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