Dependence of Bias Stress on Hydrophobicity of Gate Insulator in Solution-Processed Organic Thin-Film Transistors

Noh, Wan Woo; Lee, Sin Hyung; Lee, Gyujeong; Park, Hea Lim; Kim, Min Hoi

doi:10.1166/jnn.2016.12523

Cited by 3 publications

(2 citation statements)

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“…Previous studies have shown that the charge trapping–induced bias stress instability of OFETs is closely related to the surface properties of gate dielectrics such as their surface roughness and hydrophobicity . Thus, effective modifications of gate dielectric surfaces are required that improve device bias stress stability without significantly degrading the desired properties of the OSC layers.…”

Section: Recent Progress In Improving the Bias Stress Stability Of Ormentioning

confidence: 99%

Recent Advances in the Bias Stress Stability of Organic Transistors

Park

Kim

Choi

et al. 2019

Adv Funct Materials

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In this progress report, recent advances in the development of organic transistors with superior bias stress stability and in the understanding of the charge traps that degrade device performance under prolonged bias stress are reviewed, with a particular focus on materials science and engineering methods. The phenomenological aspects of bias stress effects and the experimental methods for investigating charge traps are described. The recent progress in the bias stress stability of organic transistors is discussed in terms of those components that are the main focus of attempts to improve bias stress stability, i.e., organic semiconductor layers, gate dielectrics, and source/drain contacts. A brief summary of this progress is presented and the outlook for future research in this field is assessed. This report aims to summarize recent progress in this field and to provide some guidelines for studying bias stress-induced charge-trapping phenomena.

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Section: Recent Progress In Improving the Bias Stress Stability Of Ormentioning

confidence: 99%

Recent Advances in the Bias Stress Stability of Organic Transistors

Park

Kim

Choi

et al. 2019

Adv Funct Materials

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“…Solution-processed organic thin-film transistors (S-OTFTs) have attracted much attention for realizing flexible or plastic electronics due to their mechanical flexibility, high scalability and low-cost manufacturing [1][2][3]. In addition, the values of the mobility of organic semiconductors (OSCs) reach as high as the mobility of typical amorphous silicon through several methods of reducing the trap densities of the organic films [3][4][5][6][7]. Generally, for the fabrication of the S-OTFTs, the orthogonal characteristics of solvents play critical roles on the preparation of the OSC layer onto the underlying polymer insulator in sequence [8,9].…”

Section: Introductionmentioning

confidence: 99%

Organic thin-film transistors with liquid crystalline polymer insulator integrated for solution-processed organic light-emitting devices

Lee

Park

Kang

et al. 2019

Semicond. Sci. Technol.

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We develop a solution-processed organic thin-film transistor (S-OTFT) with high stability and uniformity using a liquid crystalline polymer (LCP) as a gate insulator. It is found that the liquid crystal order in the LCP is one of critical factors governing the electrical properties of the S-OTFT. The photo-polymerized LCP layer exhibits the chain ordering which significantly improves the dielectric characteristics of the insulator layer and the reliability of the S-OTFT. A prototype array of 3×3 solution-processed organic light-emitting diodes integrated with the S-OTFTs based on the LCP insulator shows the high uniformity of light emission during operation.

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Impact of interfacial trap states on achieving bias stability in polymer field-effect transistors

Iqbal

Afzal

et al. 2021

Microelectronic Engineering

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Dependence of Bias Stress on Hydrophobicity of Gate Insulator in Solution-Processed Organic Thin-Film Transistors

Cited by 3 publications

References 0 publications

Recent Advances in the Bias Stress Stability of Organic Transistors

Recent Advances in the Bias Stress Stability of Organic Transistors

Organic thin-film transistors with liquid crystalline polymer insulator integrated for solution-processed organic light-emitting devices

Impact of interfacial trap states on achieving bias stability in polymer field-effect transistors

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